- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄32621 > SS10P6-M3/86A (VISHAY SEMICONDUCTORS) 7 A, 60 V, SILICON, RECTIFIER DIODE, TO-277A PDF資料下載
參數(shù)資料
| 型號(hào)： | SS10P6-M3/86A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 7 A, 60 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 92K |
| 代理商： | SS10P6-M3/86A |
Document Number: 89043
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-Apr-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS10P5, SS10P6
Vishay General Semiconductor
New Product
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
12
10
8
6
4
2
0
25
50
75
100
125
150
175
Lead Temperature (°C)
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Resistive or Inductive Load
T
L measured
at the Cathode Band Terminal
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(W)
02
4
6
8
10
12
0
1
2
3
4
5
7
D = 0.1
D = 0.3
D = 0.5
D = 0.8
D = 1.0
6
D = 0.2
D = t
p/T
t
p
T
0
0.1
0.2
0.3
0.4
0.6
0.8
1.0
100
10
1
0.1
0.01
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
0.5
0.7
0.9
0.0001
0.001
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
Reverse Voltage (V)
J
u
nction
Capacitance
(pF)
10 000
1000
0.1
1
10
100
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
0.1
1
10
100
0.1
10
100
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/W)
Junction to Ambient
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SS10P5HM3/87A | 7 A, 50 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS1P3LHE3/84A | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS1P3L-E3/85A | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS1P4L-E3/84A | 1.5 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS1P3LHE3/85A | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SS10P6-M3-87A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifier |
| SS10PH10 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount High Voltage Schottky Rectifiers |
| SS10PH10-E3/86A | 制造商:Vishay Semiconductors 功能描述: 制造商:Vishay Intertechnologies 功能描述:DIODE SCHOTTKY RECTIFIER 10A 100V |
| SS10PH10-E3/87A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount High-Voltage Schottky Rectifier |
| SS10PH10HE3/86A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount High-Voltage Schottky Rectifier |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。