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參數(shù)資料
| 型號： | SS10P4CHM3/86A |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 40 V, SILICON, RECTIFIER DIODE, TO-277A |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMPC, 3 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 92K |
| 代理商： | SS10P4CHM3/86A |
Document Number: 89035
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 10-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS10P3C, SS10P4C
Vishay General Semiconductor
New Product
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
2
4
6
8
12
10
0
25
50
75
100
125
150
175
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Lead Temperature (°C)
Resistive or Inductive Load
T
L measured
at the Cathode Band Terminal
0
1.0
0.5
1.5
2.0
2.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
6
5.5
5
Average Forward Current (A)
A
v
er
age
P
o
w
er
Loss
(W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5 D = 0.8
D = 1.0
D = t
p/T
t
p
T
0.01
0.1
1
10
100
0.2
0.1
0.3
0
0.4
0.5
0.6
0.7
0.8
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
orw
ard
C
u
rrent
(A)
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
0.001
0.01
0.1
1
10
1000
100
10
20
30
40
60
50
70
90
80
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
e
rse
C
u
rrent
(mA)
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
100
10 000
1000
0.1
1
10
100
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
0.1
1
10
100
1
10
100
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/W)
Junction to Ambient
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SS10P6-M3/86A | 7 A, 60 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS10P5HM3/87A | 7 A, 50 V, SILICON, RECTIFIER DIODE, TO-277A |
| SS1P3LHE3/84A | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS1P3L-E3/85A | 1.5 A, 30 V, SILICON, RECTIFIER DIODE, DO-220AA |
| SS1P4L-E3/84A | 1.5 A, 40 V, SILICON, RECTIFIER DIODE, DO-220AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SS10P4CHM3-87A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers |
| SS10P4C-M3/86A | 功能描述:肖特基二極管與整流器 10 Amp 40 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SS10P4C-M3/87A | 功能描述:肖特基二極管與整流器 10 Amp 40 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| SS10P4C-M3-86A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers |
| SS10P4C-M3-87A | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Surface Mount Schottky Barrier Rectifiers |
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