參數(shù)資料
型號: SR703
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁數(shù): 2/2頁
文件大?。?/td> 36K
代理商: SR703
S1A 3 DIE ID & GM Vs VG
0.10
1.00
10.00
100.00
0
2
4
6
8
10
12
14
I
Id
gM
S1A 3 DICE CAPACITANCE
1
10
100
1000
0
5
10
15
20
25
30
VDS IN VOLT S
Coss
Ciss
Crss
S R 703 P OUT VS P IN F = 500 MHZ ; IDQ= 1.2A; VDS = 28V
0
20
40
60
80
100
120
140
160
180
0
5
10
15
20
25
30
P IN IN WAT T S
7
8
9
10
Efficiency = 60%
Pout
Gain
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
SR703
S1A 3 DIE IV
0
5
10
15
20
25
0
2
vg=2v
4
6
8
10
12
14
16
18
20
VVDS IN VOLTS
I
Vg=4v
vg=8v
0
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 03/28/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SR704 制造商:POLYFET 制造商全稱:Polyfet RF Devices 功能描述:SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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