參數(shù)資料
型號(hào): SR341
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁數(shù): 2/2頁
文件大小: 36K
代理商: SR341
S3E 1 DIE ID & GM Vs VG
0.10
1.00
10.00
100.00
0
2
4
6
8
10
12
14
16
18
Vgs in Volts
I
Id
gM
S3E 1 DIE CAPACITANCE
10
1 0 0
1000
0
10
40
50
V D S I N V O L T S
Coss
Ciss
Crss
S R 341 P in vs P out F req= 175Mhz; Idq= 1A; Vds = 50V
0
50
100
150
200
250
300
350
400
450
500
0
5
10
15
20
P i n i n Wa t t s
13
14
15
16
17
18
19
E fficiency = 55%
Pout
Gain
1dB compression = 300W
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
SR341
S3E 1 DIE IV
0
5
10
15
20
25
30
35
0
2
4
6
8
10
12
14
16
18
20
vg=12v
Vg=6v
I
vg=2v
Vg=4v
vg=8v
0
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 07/10/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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