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參數(shù)資料
| 型號： | SP741 |
| 廠商： | Polyfet RF Devices |
| 英文描述： | SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
| 中文描述： | 硅柵增強型射頻功率VDMOS晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | SP741 |
S1E 1 DIE ID & GM Vs VG
0.01
0.10
1.00
10.00
0
2
4
6
8
10
12
14
16
18
Vgs in Volts
I
Id
gM
S1E 1 DIE CAPACITANCE
0.1
1
10
100
0
5
10
15
20
VDS IN VOLT S
25
30
35
40
45
50
Coss
Ciss
Crss
S P 741 P in vs P out Freq= 400MHz, VDS = 50V, Idq= .2A
0
4
8
12
16
20
24
28
32
0
0.5
1
1.5
2
2.5
3
P IN IN WAT T S
10.00
11.00
12.00
13.00
14.00
15.00
16.00
17.00
18.00
Pout
Gain
Efficiency = 50%
1dB compression = 22 watts
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
S11 & S22 SMITH CHART
PACKAGE DIMENSIONS IN INCHES
SP741
S1E 1 DIE IV
0
0.5
1
1.5
2
2.5
3
3.5
4
0
2
vg=2v
4
6
8
10
12
14
16
18
20
VDS IN VOLTS
Vg=6v
I
Vg=4v
vg=8v
0
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 03/08/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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