參數(shù)資料
型號: SP3243E
英文描述: Intelligent +3.0V to +5.5V RS-232 Transceivers(智能+3.0V 至 +5.5V RS-232收發(fā)器(3發(fā)5收))
中文描述: 智能3.0V至5.5V的RS - 232收發(fā)器(智能3.0V至5.5V的RS - 232接口收發(fā)器(3發(fā)5收))
文件頁數(shù): 2/24頁
文件大?。?/td> 235K
代理商: SP3243E
SP3223EDS/20
SP3223E +3.0V to +5.5V RS-232 Transceivers
2
Copyright 2000 Sipex Corporation
NOTE 1
: V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation
of the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may
affect reliability and cause permanent damage to the
device.
V
.......................................................-0.3V to +6.0V
V+ (NOTE 1).......................................-0.3V to +7.0V
V- (NOTE 1)........................................+0.3V to -7.0V
V+ + |V-| (NOTE 1)...........................................+13V
I
(DC V
or GND current).........................+100mA
Input Voltages
TxIN, ONLINE,
SHUTDOWN, EN (
SP3223E
).................-0.3V to +6.0V
RxIN...................................................................+15V
Output Voltages
TxOUT...............................................................+15V
RxOUT, STATUS.......................-0.3V to (V
CC
+ 0.3V)
Short-Circuit Duration
TxOUT.....................................................Continuous
Storage Temperature......................-65
°
C to +150
°
C
Unless otherwise noted, the following specifications apply for V
CC
= +3.0V to +5.5V with T
AMB
= T
MIN
to T
MAX
.
Typical values apply at V
CC
= +3.3V or +5.0V and T
AMB
= 25
°
C.
SPECIFICATIONS
R
E
T
E
M
A
R
A
P
.
N
I
M
.
P
Y
T
.
X
A
M
S
T
N
U
S
N
O
I
D
N
O
C
S
C
I
S
I
R
E
T
C
A
R
A
H
C
C
D
,
e
C
y
p
u
S
e
n
O
-
A
0
0
1
μ
A
,
D
N
G
=
E
N
I
C
,
=
N
O
V
,
e
N
,
V
p
o
W
O
3
+
N
D
I
T
=
R
U
l
S
V
=
T
H
C
C
C
B
M
A
C
°
5
2
+
n
w
o
d
h
S
,
e
C
y
p
u
S
0
0
1
μ
A
,
D
N
=
G
=
T
N
,
W
V
O
3
+
D
T
=
U
H
S
V
C
C
B
M
A
C
°
5
2
+
,
e
C
d
y
p
e
a
s
D
u
S
e
n
O
-
A
3
0
A
m
V
=
=
N
T
W
,
O
V
D
T
3
+
U
H
=
S
=
V
E
N
,
a
I
o
N
o
O
n
C
C
,
+
C
C
B
M
A
C
°
5
2
S
T
U
P
T
U
O
R
E
V
I
E
C
E
R
D
N
A
S
T
U
P
N
I
C
I
G
O
L
d
h
W
H
G
s
e
T
O
L
H
c
o
L
t
p
n
I
0
8
V
V
E
S
C
C
N
H
N
I
T
E
N
,
V
0
+
O
r
E
3
N
W
V
2
3
+
3
P
O
D
T
=
(
S
U
,
2
,
I
N
,
t
e
C
e
g
a
k
a
e
L
t
p
n
1
0
±
0
±
μ
A
,
N
W
O
D
T
U
H
S
,
E
N
I
C
N
O
°
,
5
N
2
+
E
,
=
N
I
T
T
A
B
M
t
e
C
e
g
a
k
a
e
L
t
p
O
5
0
±
0
1
±
μ
A
d
e
a
s
s
v
c
e
R
W
O
L
e
g
a
V
t
p
O
4
V
I
T
U
O
A
m
6
=
H
G
I
H
e
g
a
V
t
p
O
V
C
C
6
-
V
C
C
1
-
V
I
T
U
O
A
m
0
=
Power Dissipation per package
28-pin PDIP (derate 16.0mW/
o
C above+70
o
C).....1300mW
20-pin SSOP (derate 9.25mW/
o
C above +70
o
C)....750mW
20-pin TSSOP (derate 11.1mW/
o
C above +70
o
C)..900mW
28-pin SOIC (derate 12.7mW/
o
C above +70
o
C)...1000mW
28-pin SSOP (derate 11.2mW/
o
C above +70
o
C)....900mW
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