參數(shù)資料
型號(hào): SP3220EB
元件分類(lèi): 外設(shè)及接口
英文描述: Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C
中文描述: 電可擦除可編程邏輯器件
文件頁(yè)數(shù): 2/19頁(yè)
文件大?。?/td> 160K
代理商: SP3220EB
Rev: A Date:12/11/03 SP3220EB/EU +3.0 to +5.0V RS-232 Transceivers
Copyright 2002 Sipex Corporation
2
NOTE 1:
V+ and V- can have maximum magnitudes of 7V, but their absolute difference cannot exceed 13V.
ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation
of the device at these ratings or any other above those
indicated in the operation sections of the specifications
below is not implied. Exposure to absolute maximum
rating conditions for extended periods of time may
affect reliability and cause permanent damage to the
device.
V
.............................................................-0.3V to +6.0V
V+ (NOTE 1)..............................................-0.3V to +7.0V
V- (NOTE 1).............................................+0.3V to -7.0V
V+ + |V-| (NOTE 1)...................................................+13V
I
CC
(DC V
CC
or GND current)..........................+100mA
Input Voltages
TxIN, EN .............................................. -0.3V to +6.0V
RxIN ................................................................... +25V
Output Voltages
TxOUT ............................................................. +13.2V
RxOUT .........................................-0.3V to (V
CC
+0.3V)
Short-Circuit Duration
TxOUT ...................................................... Continuous
Storage Temperature ....................... -65°C to +150°C
Power Dissipation Per Package
16-pin SSOP (derate 9.69mW/
o
Cabove+70
o
C) ........ 775mW
16-pin TSSOP (derate 10.5mW/
o
C above +70
o
C)..... 840mW
16-pin Wide SOIC (derate 11.2mW/
o
C above+70
o
C) 900mW
SPECIFICATIONS
Unless otherwise noted, the following specifications apply for V
= +3.0V to +5.0V with T
AMB
= T
MIN
to T
MAX
.
Typical Values apply at V
CC
= +3.3V or +5.0V and T
AMB
= 25
o
C, C1-4=0.1μF.
R
E
T
E
M
A
R
A
P
.
N
I
M
.
P
Y
T
.
X
A
M
S
T
N
U
S
N
O
I
D
N
O
C
S
C
I
S
I
R
E
T
C
A
R
A
H
C
C
D
t
e
C
y
p
u
S
3
0
A
m
T
N
,
a
=
o
N
o
I
T
n
B
M
D
A
5
2
+
V
=
o
V
,
C
C
C
V
3
=
r
G
C
C
t
e
C
y
p
u
S
n
w
o
d
h
S
0
0
1
μ
A
,
D
N
r
G
V
=
0
N
=
D
N
H
I
T
S
T
B
M
A
5
2
+
=
o
V
,
C
C
C
V
3
+
=
V
C
C
S
T
U
P
T
U
O
R
E
V
I
E
C
E
R
D
N
A
S
T
U
P
N
I
C
I
G
O
L
W
O
L
d
h
s
e
T
c
o
L
t
p
n
8
V
CC
V
2
e
N
,
N
D
H
S
,
N
E
,
N
I
T
H
G
I
H
d
h
s
e
T
c
o
L
t
p
n
0
V
V
C
C
r
2
e
N
,
V
3
=
2
e
N
,
V
0
t
e
C
e
g
a
k
a
e
L
t
p
n
1
0
±
0
±
μ
A
,
=
N
D
V
H
C
S
o
,
5
N
2
+
E
,
=
N
I
T
T
A
e
R
B
v
c
M
N
I
V
o
V
0
C
0
C
t
e
C
e
g
a
k
a
e
L
t
p
O
5
0
±
0
1
±
μ
A
V
d
e
a
s
D
s
T
U
O
V
o
V
=
C
C
W
O
L
e
g
a
V
t
p
O
4
V
I
T
U
O
A
m
6
=
H
G
I
H
e
g
a
V
t
p
O
V
C
C
6
V
C
C
1
V
I
T
U
O
A
m
0
=
S
T
U
P
T
U
O
R
E
V
I
R
D
g
n
w
S
e
g
a
V
t
p
O
0
±
4
±
V
k
3
T
A
V
C
V
O
V
O
,
p
o
r
v
l
t
d
n
u
o
o
C
o
5
2
d
a
+
o
=
B
M
e
c
n
a
e
R
t
p
O
0
0
3
C
T
,
V
0
=
-
V
=
+
V
=
T
U
O
= + V
2
t
e
C
t
c
C
-
h
S
t
p
O
5
3
±
0
6
±
A
m
T
U
V
0
=
t
e
C
e
g
a
k
a
e
L
t
p
O
5
2
±
μ
A
T
U
= +
V
,
V
2
1
C
C
d
e
a
s
s
v
V
5
o
V
0
=
GND
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