- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄372158 > SML1001RHN N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id:10A,Vgs:30V)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:1000V,Id:10A,Vgs:30V)) PDF資料下載
參數(shù)資料
| 型號(hào)： | SML1001RHN |
| 英文描述： | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id:10A,Vgs:30V)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:1000V,Id:10A,Vgs:30V)) |
| 中文描述： | N溝道增強(qiáng)模式高壓功率MOSFET（減振鋼板基本：1000V的檔案號(hào)：10A條，柵極電壓：30V的）（不適用溝道增強(qiáng)型，高電壓功率馬鞍山場(chǎng)效應(yīng)管（減振鋼板基本：1000V的檔案號(hào)：10A條，柵極電壓：30V的）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 18K |
| 代理商： | SML1001RHN |
SML1001RHN
SML901RHN
0
Prelim. 7/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukSML
Parameter
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Total Power Dissipation @ T
case
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Lead Tempeature (0.063” from Case for 10 Sec.)
901RHN
900
1001RHN
1000
Unit
V
A
A
V
W
W/°C
Characteristic / Test Conditions / Part Number
Min.
1000
Typ.
Max.
Unit
BV
DSS
I
DSS
I
GSS
I
D(ON)
V
GS(TH)
R
DS(ON)
V
DSS
I
D
I
DM
V
GS
P
D
T
J
, T
STJ
T
L
1
2
3
17.65 (0.695)
17.39 (0.685)
4.19 (0.165)
3.94 (0.155)
Dia.
1
1
1
1
1
1
1.65 (0.065)
1.39 (0.055)
Typ.
Pin 2 – Source
5.08 (0.200)
BSC
3.56 (0.140)
BSC
2
2
1.14 (0.707)
0.88 (0.035)
6.86 (0.270)
6.09 (0.240)
TO–258 Package Outline.
Dimensions in mm (Inches)
SML1001RHN
SML901RHN
10
40
±30
250
2
–55 to +150°C
300
°C
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(V
GS
= 0V)
Gate – Source Leakage Current
On State Drain Current
2
Gate Threshold Voltage
Static Drain – Source On State Resistance
2
900
250
1000
±100
10
2
4
1.00
V
m
A
nA
A
V
W
MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380
μ
S , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS
(T
case
=25°C unless otherwise stated)
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
4TH GENERATION MOSFET
D
G
S
V
GS
= 0V
I
D
= 250
m
A
V
DS
= V
DSS
V
DS
= 0.8V
DSS
V
GS
= ±30V
V
DS
> I
D(ON)
x R
DS(ON)
Max
V
GS
= 10V
V
DS
= V
GS
V
GS
= 10V , I
D
= 0.5 I
D
[Cont.]
T
C
= 125
°
C
V
DS
= 0V
I
D
= 1.0mA
Pin 1 – Drain
Pin 3 – Gate
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SML901RHN0 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:900V,Id:10A,Vgs:30V)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:900V,Id:10A,Vgs:30V)) |
| SML901RHN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML1001RHN | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML1 | Thin Film Limiter Module 5 to 3000 MHz |
| SML20H45 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:200V,Id(cont):45A,Rds(on):0.04Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:200V,Id(cont):45A,Rds(on):0.04Ω)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SML1004R2GXN | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:4TH GENERATION MOSFET N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE ISOLATED POWER MOSFETS |
| SML10051 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:5phi Round Bicolor LEDs |
| SML10051_08 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:5phi Round Bicolor LEDs |
| SML10060 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:2.5x5 Rectangular Bicolor LED |
| SML100A9 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。