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參數(shù)資料
| 型號(hào)： | SM8S26A2E |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | SM8S26A2E |
Electrical Characteristics (TC = 25°C unless otherwise noted)
Maximum
Max. Peak
Maximum
Reverse
Pulse
Clamping
Device Type
Breakdown Voltage
Test Current
Stand-off
Leakage
Current
Voltage at
V(BR)
IT
Voltage
at VWM
at 10/1000
sIPPM
(V)
VWM
ID
Tc = 175
oC
Waveform
C
Min.
Max.
(mA)
(V)
(
A)
ID(
A)
(A)
(V)
SM8S10
11.1
13.6
5.0
10.0
15
250
351
18.8
SM8S10A
11.1
12.3
5.0
10.0
15
250
388
17.0
SM8S11
12.2
14.9
5.0
11.0
10
150
328
20.1
SM8S11A
12.2
13.5
5.0
11.0
10
150
363
18.2
SM8S12
13.3
16.3
5.0
12.0
10
150
300
22.0
SM8S12A
13.3
14.7
5.0
12.0
10
150
332
19.9
SM8S13
14.4
17.6
5.0
13.0
10
150
277
23.8
SM8S13A
14.4
15.9
5.0
13.0
10
150
307
21.5
SM8S14
15.6
19.1
5.0
14.0
10
150
256
25.8
SM8S14A
15.6
17.2
5.0
14.0
10
150
284
23.2
SM8S15
16.7
20.4
5.0
15.0
10
150
245
26.9
SM8S15A
16.7
18.5
5.0
15.0
10
150
270
24.4
SM8S16
17.8
21.8
5.0
16.0
10
150
229
28.8
SM8S16A
17.8
19.7
5.0
16.0
10
150
254
26.0
SM8S17
18.9
23.1
5.0
17.0
10
150
216
30.5
SM8S17A
18.9
20.9
5.0
17.0
10
150
239
27.6
SM8S18
20.0
24.4
5.0
18.0
10
150
205
32.2
SM8S18A
20.0
22.1
5.0
18.0
10
150
226
29.2
SM8S20
22.2
27.1
5.0
20.0
10
150
184
35.8
SM8S20A
22.2
24.5
5.0
20.0
10
150
204
32.4
SM8S22
24.4
29.8
5.0
22.0
10
150
168
39.4
SM8S22A
24.4
26.9
5.0
22.0
10
150
186
35.5
SM8S24
26.7
32.6
5.0
24.0
10
150
153
43.0
SM8S24A
26.7
29.5
5.0
24.0
10
150
170
38.9
SM8S26
28.9
35.3
5.0
26.0
10
150
142
46.6
SM8S26A
28.9
31.9
5.0
26.0
10
150
157
42.1
SM8S28
31.1
38.0
5.0
28.0
10
150
132
50.1
SM8S28A
31.1
34.4
5.0
28.0
10
150
145
45.4
SM8S30
33.3
40.7
5.0
30.0
10
150
123
53.5
SM8S30A
33.3
36.8
5.0
30.0
10
150
136
48.4
SM8S33
36.7
44.9
5.0
33.0
10
150
112
59.0
SM8S33A
36.7
40.6
5.0
33.0
10
150
124
53.3
SM8S36
40.0
48.9
5.0
36.0
10
150
103
64.3
SM8S36A
40.0
44.2
5.0
36.0
10
150
114
58.1
Note: For all types maximum VF = 1.8V at IF = 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
SM8S Series
Surface Mount Automotive
Transient Voltage Suppressors
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SM8S36A2E | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| SM8S10A2D | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| SM8S18A2E | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| SM8S14A2E | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| SM8S17A2D | 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SM8S26A-E3/2D | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 8W 26V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM8S26A-E3/2E | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 8.0W 26V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM8S26AHE3/2D | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 8.0W 26V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM8S26AHE3/2E | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 8.0W 26V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM8S26-E3/2D | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 8W 26V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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