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    參數(shù)資料
    型號: SM8S17A2D
    廠商: GENERAL SEMICONDUCTOR INC
    元件分類: TVS二極管 - 瞬態(tài)電壓抑制
    英文描述: 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB
    文件頁數(shù): 3/3頁
    文件大?。?/td> 62K
    代理商: SM8S17A2D
    Ratings and
    Characteristic Curves TA=25OC unless otherwise noted.
    Power Derating Curve
    0
    2.0
    4.0
    6.0
    8.0
    0
    50
    100
    150
    200
    P
    o
    w
    er
    Dissipation
    (W)
    Re
    v
    erse
    Surge
    P
    o
    w
    er
    (W)
    Pulse Width (ms) – 1/2 IPP Exponential Waveform
    1,000
    10,000
    10
    100
    Case Temperature (
    °C)
    0
    50
    100
    150
    0
    10
    20
    30
    40
    Input
    P
    eak
    Pulse
    Current
    %
    Time, ms (t)
    Pulse Waveform
    Reverse Power Capability
    TA = 25
    °C
    Pulse width (td) is defined as
    the point where the peak
    current decays to 50% of IPP
    td
    tr = 10
    s
    Peak Value IPP
    Half Value –
    IPP
    2
    10/1000
    s
    Load Dump Power Characteristics
    (10ms Exponential Waveform)
    0
    2,000
    1,000
    3,000
    4,000
    5,000
    6,000
    25
    50
    75
    100
    125
    150
    175
    Load
    Dump
    P
    o
    w
    er
    (W)
    Case Temperature (
    °C)
    T
    ransient
    Ther
    mal
    Impedance
    (
    °C/W)
    0.01
    110
    100
    10
    1
    100
    0.01
    0.1
    t – Pulse Width (sec.)
    0.1
    RΘJA
    RΘJC
    Typical Transient Thermal Impedance
    SM8S Series
    Surface Mount Automotive
    Transient Voltage Suppressors
    相關(guān)PDF資料
    PDF描述
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    SM8S11-2D 5200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
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