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參數(shù)資料
| 型號(hào)： | SM5A27/2E |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB |
| 封裝： | PLASTIC PACKAGE-1 |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 28K |
| 代理商： | SM5A27/2E |
SM5A27
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88381
2
08-Oct-02
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Min
Typ
Max
Unit
Reverse zener voltage at 10mA
VZ
24.0
–
30.0
V
Zener voltage temperature coefficient at IZ = 10mA
VZTC
––
36
mV/°C
Clamping voltage for 10
s/10ms exponentially
decaying waveform at IPP = 55A
VC
––
40.0
V
Instantaneous
at 6.0A
VF
––
1.0
V
forward voltage(1)
at 100A
–
0.95
–
Reverse leakage current at rated VWM
TJ = 25°C
IR
––
0.2
A
TJ = 175°C
––
10.0
Notes: (1) Measured on a 300
s square pulse width
Power Derating Curve
0
2.0
4.0
6.0
8.0
0
50
100
150
200
P
o
w
er
Dissipation
(W)
Re
v
erse
Surge
P
o
w
er
(W)
Pulse Width (ms) – 1/2 IPP Exponential Waveform
1,000
10,000
10
100
Case Temperature (
°C)
0
50
100
150
0
10
20
30
40
Input
P
eak
Pulse
Current
%
Time, ms (t)
Pulse Waveform
Reverse Power Capability
TA = 25
°C
Pulse width (td) is defined as
the point where the peak
current decays to 50% of IPP
td
tr = 10
s
Peak Value IPP
Half Value –
IPP
2
Load Dump Power Characteristics
(10ms Exponential Waveform)
0
1,000
500
1,500
2,000
2,500
3,000
25
50
75
100
125
150
175
Load
Dump
P
o
w
er
(W)
Case Temperature (
°C)
Ratings and
Characteristic Curves TA=25OC unless otherwise noted.
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| SM5A27-E3/2D | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 3600W 27V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SM5A27-E3/2E | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 3600W 27V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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