參數(shù)資料
型號(hào): SL12HE3
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 1.5 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC
封裝: LEAD FREE, PLASTIC, SMA, 2 PIN
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 199K
代理商: SL12HE3
SL12 & SL13
Document Number 88740
15-Jul-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AC (SMA)
Low VF Surface Mount Schottky Rectifier
Major Ratings and Characteristics
IF(AV)
1.5 A
VRRM
20 V, 30 V
IFSM
50 A
VF
0.34 V
Tj max.
125 °C
Features
Low profile package
Ideal for automated placement
Guardring for overvoltage protection
Low power losses, high efficiency
Very low forward voltage drop
High surge capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage, high frequency inverters, free-
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-214AC (SMA)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes the cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
SL12
SL13
Unit
Device marking code
SL2
SL3
Maximum repetitive peak reverse voltage
VRRM
20
30
V
Maximum RMS voltage
VRMS
14
21
V
Maximum DC blocking voltage
VDC
20
30
V
Maximum average forward rectified current
at TL = 105 °C (Fig.1)
IF(AV)
15
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 55 to + 125
°C
Storage temperature range
TSTG
- 55 to + 150
°C
相關(guān)PDF資料
PDF描述
SL12/11T 1.5 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AC
SL23 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA
SL22-E3 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA
SL23/55T 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AA
SL22/52T 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA
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