參數(shù)資料
型號: SKIIP30NAB12
廠商: SEMIKRON INTERNATIONAL
元件分類: 功率晶體管
英文描述: 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter
中文描述: 33 A, 1200 V, N-CHANNEL IGBT
封裝: CASE M3, MINISKIIP-22
文件頁數(shù): 3/4頁
文件大?。?/td> 292K
代理商: SKIIP30NAB12
B 16 – 4
0698
by SEMIKRON
T
j
=
150 °C
V
GE
= ± 15 V
t
sc
=
10
μ
s
L
ext
< 25 nH
T
j
=
150 °C
V
GE
= ± 15 V
T
j
= 150 °C
V
GE
=
15 V
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT
Fig. 10Safe operating area at short circuit of the IGBT
Fig. 7 Rated current of the IGBT I
Cop
/ I
C
= f (T
h
)
0
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
ICop/ IC
Mini1207
Th[°C]
0
0,5
1
1,5
2
2,5
0
500
1000
1500
ICpuls/IC
Mini1209
VCE[V]
0
2
4
6
8
10
12
0
500
1000
1500
VCE[V]
Note:
*Allowed numbers of
short circuit:<1000
*Time between short
circuit:>1s
ICsc/ICN
Mini1210
Fig. 11Typ. freewheeling diode forward characteristic
Fig. 12Forward characteristic of the input bridge diode
MiniSKiiP 1200 V
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