參數(shù)資料
型號: SK85C
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: 8.0 AMPS. Surface Mount Schottky Barrier Rectifiers
中文描述: 8.0安培。表面貼裝肖特基
文件頁數(shù): 1/2頁
文件大小: 50K
代理商: SK85C
- 76 -
SK82C
THRU
SK86C
8.0 AMPS. Surface Mount Schottky Barrier Rectifiers
Voltage Range
20 to 60 Volts
Current
8.0 Amperes
SMC/DO-214AB
Dimensions in inches and (millimeters)
Features
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
260
C / 10 seconds at terminals
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.21 gram
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
SK
82C
20
14
20
SK
83C
30
21
30
SK
84C
40
28
40
SK
85C
50
35
50
SK
86C
60
42
60
Units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
V
RMS
V
DC
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
L
(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated Load
(JEDEC method )
Maximum Instantaneous Forward Voltage
(Note 1)
@8.0A
I
(AV)
8.0
A
I
FSM
100
A
V
F
0.55
0.75
V
0.5
Maximum DC Reverse Current @ T
A
=25
at
Rated DC Blocking Voltage @ T
A
=100
I
R
20
10
mA
mA
/W
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Storage Temperature Range
Notes
:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.6 x 0.6” (16.0 x 16.0mm) Copper Pad Areas.
R
θ
JL
T
J
T
STG
20
-55 to +125
-55 to +150
-55 to +150
.118(3.0)
.012(.31)
.008(.20)
.060(1.52)
.245(6.22)
.220(5.59)
.280(7.11)
.260(6.60)
.103(2.62)
.079(2.00)
.320(8.13)
.305(7.75)
相關(guān)PDF資料
PDF描述
SK86C 8.0 AMPS. Surface Mount Schottky Barrier Rectifiers
SKA06N60 CLAMP CA FLAT 3484-1000 3M
SKA06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技術(shù)中的快速 S-IGBT)
SKB02N120 Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速S-IGBT)
SKP02N120 Fast S-IGBT in NPT-technology( NPT 技術(shù)中的快速S-IGBT)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SK85C R6 制造商:SKMI/Taiwan 功能描述:Diode Schottky 50V 8A 2-Pin SMC T/R
SK85MH10 制造商:SEMIKRON 功能描述:MOSFET MODULE H BRIDGE 100V
SK85MH10_06 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:MOSFET Module
SK85MH10T 制造商:SEMIKRON 功能描述:MOSFET MODULE H BRIDGE 100V 制造商:SEMIKRON 功能描述:MOSFET MODULE, H BRIDGE 100V 制造商:SEMIKRON 功能描述:MOSFET MODULE, H BRIDGE 100V; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.3V; No. of Pins:16 ;RoHS Compliant: Yes
SK85MH10T_07 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:MOSFET Module