參數(shù)資料
型號(hào): SK50GD066ET_07
廠商: SEMIKRON
英文描述: IGBT Module
中文描述: IGBT模塊
文件頁數(shù): 2/3頁
文件大小: 306K
代理商: SK50GD066ET_07
SEMITOP
3
IGBT Module
SK50GD066ET
Target Data
Features
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$% # &'
! (
Typical Applications
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#. / ,'
GD-ET
Characteristics
Symbol
Inverse Diode
-
&
0 -
5
Conditions
min.
typ.
max.
Units
!
&
0 2+ $ -
"5
0 + -
7
0 12 3
7
0 *2+ 3
7
0 12 3
7
0 *2+ 3
7
0 12 3
7
0 *2+ 3
7
0 *2+ 3
).
*42
*42
*
+4F
*+
*1
-
-
-
-
).
-
&+
*4*
*
*1
*/
&
G
G
!
;;<
L
5
!
&
0 2+ $
$
B
I
-
0 >++-
;
7C
<
*4:
JK'
,
1412
142
(
>+
Temperature sensor
;
*++
0*++3 ;
12
02,G
/F>=2M
G
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
SK50GD066ET
2
05-09-2007 DIL
by SEMIKRON
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