參數(shù)資料
型號(hào)： SIDAC
英文描述： silicon bilateral voltage triggered switch
中文描述： 硅雙邊電壓觸發(fā)開(kāi)關(guān)
文件頁(yè)數(shù)： 6/6頁(yè)
文件大?。?/td> 269K
代理商： SIDAC
Electrical Specifications
SIDAC
9-6
Teccor Electronics
(972) 580-7777
Figure 9.14
Dynamic Holding Current Test Circuit for Sidacs
Figure 9.15
Basic Sidac Circuit
Figure 9.16
Relaxation oscillator Using a Sidac
Figure 9.17
Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements
100-250
VAC
60 Hz
SCOPE
PUSH
TO
TEST
S1
SWITCH TO TEST IN
EACH DIRECTION
100
1%
UNDER
TEST
S1
SCOPE INDICATIONS
TRACE STOPS
IH
IPK
LOAD
100-250
VAC
60 Hz
IH
VBO
VBO
VBO
120-145
CONDUCTION
ANGLE
IH
IH
LOAD CURRENT
VDC(IN)
≥
VB0
VC
IL
RL
R
SIDAC
(a) Circuit
Rmax
≤
VIN - VBO
IBO
Rmin
≥
VIN - VTM
IH (MIN)
(b) Waveforms
VBO
VC
IL
t
t
C
VCE MONITOR
100 mH
IC MONITOR
+
-
RS = 0.1
TEST CIRCUIT
VBB1 =10 V
+
-
VBB2 =0
RBB2 =
100
RBB1 =
150
2N6127
(or equivalent)
50
50
INPUT
(See Note B)
TIP-47
VCC = 20 V
VOLTAGE AND CURRENT WAVEFORMS
INPUT
VOLTAGE
0 V
5 V
0.63 A
0
SIDAC VBO
10 V
VCE(sat)
≈
3 ms
(tw
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
100 mS
tw
NOTE A: Input pulse width is increased until ICM = 0.63A.
NOTE B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected.
The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the
transistor could be destroyed.
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