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參數(shù)資料
| 型號(hào)： | SI4012-A0-GT |
| 廠商： | Silicon Laboratories Inc |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 460K |
| 描述： | TRANSMITTER RF 27-960MHZ 10-MSOP |
| 標(biāo)準(zhǔn)包裝： | 50 |
| 頻率： | 27MHz ~ 960MHz |
| 應(yīng)用： | 家庭/工業(yè)自動(dòng)化，遠(yuǎn)程訪問(wèn)，安全警報(bào) |
| 調(diào)制或協(xié)議： | FSK，OOK |
| 數(shù)據(jù)傳輸率 - 最大： | 100 kBaud |
| 功率 - 輸出： | 10dBm |
| 電流 - 傳輸： | 19.8mA |
| 數(shù)據(jù)接口： | PCB，表面貼裝 |
| 天線連接器： | PCB，表面貼裝 |
| 特點(diǎn)： | 無(wú)晶操作 |
| 電源電壓： | 1.8 V ~ 3.6 V |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 10-TFSOP，10-MSOP（0.118"，3.00mm 寬） |
| 包裝： | 管件 |
Si4012
6
Rev 1.1
Table 4. Low Battery Detector Characteristics*
(TA = 25?C, VDD = 3.3 V, RL = 550 W, unless otherwise noted)
Parameter
Test Condition
Min
Typ
Max
Unit
Battery Voltage Measurement Accuracy
2
%
*Note: All specifications guaranteed by production test unless otherwise noted. Production test conditions and max limits are
listed in "1.1. Definition of Test Conditions" on page 7.
Table 5. Optional Crystal Oscillator Characteristics*
(TA = 25?C, VDD = 3.3 V, RL = 600 W, unless otherwise noted)
Parameter
Test Condition
Min
Typ
Max
Unit
Crystal Frequency Range
10
13
MHz
Input Capacitance (GPIO0)
GPIO0 configured as a crystal oscillator;
XO_LOWCAP=1
3
pF
GPIO0 configured as a crystal oscillator;
XO_LOWCAP=0
5.5
pF
Crystal ESR
GPIO0 configured as a crystal oscillator;
XO_LOWCAP=1
120
W
GPIO0 configured as a crystal oscillator;
XO_LOWCAP=0
80
W
Start-Up Time
Crystal oscillator only,
60 mH motional arm inductance
9
50
ms
*Note: All specifications guaranteed by production test unless otherwise noted. Production test conditions and max limits are
listed in "1.1. Definition of Test Conditions" on page 7.
Table 6. Thermal Conditions
Parameter
Symbol
Value
Unit
Ambient Temperature
T
A
40 to 85
癈
Junction Temperature
T
OP
40 to 90
癈
Storage Temperature
T
STG
55 to 125
癈
Table 7. Absolute Maximum Ratings
1,2
Parameter
Symbol
Value
Unit
Supply Voltage
V
DD
0.5 to 3.9
V
Input Current
3
I
IN
10
mA
Input Voltage
4
V
IN
0.3 to (V
DD
+ 0.3)
V
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond recommended
operating conditions for extended periods may affect device reliability.
2. Handling and assembly of these devices should only be done at ESD-protected workstations.
3. All input pins besides V
DD
.
4. For GPIO pins configured as inputs.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI4012-A0-GTR | 功能描述:射頻發(fā)射器 27-960 MHz 射頻發(fā)射器 RoHS:否 制造商:Micrel 類型:ASK Transmitter 封裝 / 箱體:SOT-23-6 工作頻率:300 MHz to 450 MHz 封裝:Reel |
| SI4012-C1001AT | 制造商:SILABS 制造商全稱:SILABS 功能描述:Si4012 CRYSTAL-LESS FSK/OOK RF TRANSMITTER |
| Si4012-C1001GT | 功能描述:射頻發(fā)射器 27-960 MHz RF transmitter RoHS:否 制造商:Micrel 類型:ASK Transmitter 封裝 / 箱體:SOT-23-6 工作頻率:300 MHz to 450 MHz 封裝:Reel |
| Si4012-C1001GTR | 功能描述:射頻發(fā)射器 27-960MHz RF trnsmtr RoHS:否 制造商:Micrel 類型:ASK Transmitter 封裝 / 箱體:SOT-23-6 工作頻率:300 MHz to 450 MHz 封裝:Reel |
| Si4012-C1-GT | 功能描述:射頻發(fā)射器 27-960 MHz 射頻發(fā)射器 RoHS:否 制造商:Micrel 類型:ASK Transmitter 封裝 / 箱體:SOT-23-6 工作頻率:300 MHz to 450 MHz 封裝:Reel |
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