- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄2016 > SI3011-F-FS (Silicon Laboratories Inc)IC VOICE DAA GCI/PCM/SPI 16SOIC PDF資料下載
參數(shù)資料
| 型號(hào)： | SI3011-F-FS |
| 廠商： | Silicon Laboratories Inc |
| 文件頁(yè)數(shù)： | 56/128頁(yè) |
| 文件大?。?/td> | 0K |
| 描述： | IC VOICE DAA GCI/PCM/SPI 16SOIC |
| 標(biāo)準(zhǔn)包裝： | 48 |
| 系列： | ISOcap™ |
| 電源電壓： | 3 V ~ 3.6 V |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 16-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 16-SOIC N |
| 包裝： | 管件 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)當(dāng)前第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)
Si3050 + Si3011/18/19
Rev. 1.5
33
5.18. Ring Detection
The ring signal is resistively coupled from TIP and RING
to the RNG1 and RNG2 pins. The Si3050 supports
either full- or half-wave ring detection. With full-wave
ring detection, the designer can detect a polarity
reversal of the ring signal. See “5.25.Caller ID” on
page 36. The ring detection threshold is programmable
with the RT bit (Register 16, bit 0) and RT2 bit
(Register 17, bit 4). The ring detector output can be
monitored in three ways. The first method uses the
RGDT pin. The second method uses the register bits,
RDTP, RDTN, and RDT (Register 5). The final method
uses the DTX output.
The ring detector mode is controlled by the RFWE bit
(Register 18, bit 1). When the RFWE bit is 0 (default
mode), the ring detector operates in half-wave rectifier
mode. In this mode, only positive ring signals are
detected. A positive ring signal is defined as a voltage
greater than the ring threshold across RNG1-RNG2.
Conversely, a negative ring signal is defined as a
voltage less than the negative ring threshold across
RNG1-RNG2. When the RFWE bit is 1, the ring detector
operates in full-wave rectifier mode. In this mode, both
positive and negative ring signals are detected.
The first method to monitor ring detection output uses
the RGDT pin. When the RGDT pin is used, it defaults
to active low, but can be changed to active high by
setting the RPOL bit (Register 14, bit 1). This pin is an
open-drain output, and requires a 4.7 k
pullup or
pulldown for correct operation. If multiple RGDT pins
are connected to a single input, the combined pullup or
pulldown resistance should equal 4.7 k
When the RFWE bit is 0, the RGDT pin is asserted
when the ring signal is positive, which results in an
output signal frequency equal to the actual ring
frequency. When the RFWE bit is 1, the RGDT pin is
asserted when the ring signal is positive or negative.
The output then appears to be twice the frequency of
the ring waveform.
The second method to monitor ring detection uses the
ring detect bits (RDTP, RDTN, and RDT). The RDTP
and RDTN behavior is based on the RNG1-RNG2
voltage. When the signal on RNG1-RNG2 is above the
positive ring threshold, the RDTP bit is set. When the
signal on RNG1-RNG2 is below the negative ring
threshold, the RDTN bit is set. When the signal on
RNG1-RNG2 is between these thresholds, neither bit is
set.
The RDT behavior is also based on the RNG1-RNG2
voltage. When the RFWE bit is 0, a positive ring signal
sets the RDT bit for a period of time. When the RFWE
bit is 1, a positive or negative ring signal sets the RDT
bit.
The RDT bit acts like a one shot. When a new ring
signal is detected, the one shot is reset. If no new ring
signals are detected prior to the one shot counter
reaching 0, then the RDT bit clears. The length of this
count is approximately 5 seconds. The RDT bit is reset
to
0
by
an
off-hook
event.
If
the
RDTM
bit
(Register 3, bit 7) is set, a hardware interrupt occurs on
the AOUT/INT pin when RDT is triggered. This interrupt
can
be
cleared
by
writing
to
the
RDTI
bit
(Register 4, bit 7). When the RDI bit (Register 2, bit 2) is
set, an interrupt occurs on both the beginning and end
of the ring pulse as defined by the RTO bits
(Register 23, bits 6:3). Ring validation may be enabled
when using the RDI bit.
The third method to monitor detection uses the DTX
data samples to transmit ring data. If the ISOcap is
active (PDL=0) and the device is not off-hook or in
on-hook line monitor mode, the ring data is presented
on DTX. The waveform on DTX depends on the state of
the RFWE bit.
When RFWE is 0, DTX is –32768 (0x8000) while the
RNG1-RNG2 voltage is between the thresholds. When
a ring is detected, DTX transitions to +32767 when the
ring signal is positive, then goes back to –32768 when
the ring is near 0 and negative. Thus a near square
wave is presented on DTX that swings from –32768 to
+32767 in cadence with the ring signal.
When RFWE is 1, DTX sits at approximately +1228
while
the
RNG1-RNG2
voltage
is
between
the
thresholds. When the ring becomes positive, DTX
transitions to +32767. When the ring signal goes near 0,
DTX remains near 1228. As the ring becomes negative,
the DTX transitions to –32768. This repeats in cadence
with the ring signal.
To observe the ring signal on DTX, watch the MSB of
the data. The MSB toggles at the same frequency as
the ring signal independent of the ring detector mode.
This method is adequate for determining the ring
frequency.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI3012-KS | IC LINE-SIDE DAA 16SOIC |
| SI3019-F-FS | IC LINE-SIDE DAA 16SOIC |
| SI3019-F-GM | IC VOICE GLOBAL DAA PROGR 20QFN |
| SI3063-F-FS | IC DAA ENH GLOB LINE-SIDE 16SOIC |
| SI3066-B-FS | IC DAA ENH FCC LINE-SIDE 8SOIC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI3011-F-FSR | 功能描述:電信線路管理 IC Si3050 FCC/TBR21 Voice DAA Line-Side RoHS:否 制造商:STMicroelectronics 產(chǎn)品:PHY 接口類型:UART 電源電壓-最大:18 V 電源電壓-最小:8 V 電源電流:30 mA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VFQFPN-48 封裝:Tray |
| Si3011-F-FT | 功能描述:電信語音調(diào)制 IC Si3050 FCC/TBR21 Voice DAA Line-Side RoHS:否 制造商:Epson Electronics America 產(chǎn)品: 應(yīng)用:Voice Guidance product 封裝 / 箱體:PQFP-52 電源電壓-最大:3.6 V, 5.5 V 最大工作溫度: 最小工作溫度: 封裝: |
| SI3011-F-FTR | 制造商:Silicon Laboratories Inc 功能描述:SI3050 FCC/TBR21 VOICE DAA LINE-SIDE - LEAD-FREE - Tape and Reel |
| SI3011-F-GM | 制造商:SILABS 制造商全稱:SILABS 功能描述:PROGRAMMABLE VOICE DAA SOLUTIONS |
| SI3011-F-GS | 制造商:SILABS 制造商全稱:SILABS 功能描述:PROGRAMMABLE VOICE DAA SOLUTIONS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。