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參數(shù)資料
| 型號(hào)： | SHF-0189Z |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 0.05 - 6 GHz, 0.5 Watt GaAs HFET |
| 中文描述： | 0.05 - 6千兆赫，0.5瓦砷化鎵異質(zhì)結(jié)場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 103K |
| 代理商： | SHF-0189Z |
SHF-0189 0.5 Watt HFET
2
EDS-101240 Rev E
303 S. Technology Court, Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com
0.00
0.25
0.50
0.75
1.00
1.25
1.50
-40
-15
10
Lead Temperature (C)
35
60
85
110
135
160
Freq
(MHz)
900
1960
2140
2450
V
DS
(V)
8
8
8
8
I
(mA)
100
100
100
100
P1dB
(dBm)
27.2
27.6
27.5
27.3
OIP3*
(dBm)
40
40
40
40
Gain
(dB)
18.6
16.7
15.2
15.2
S11
(dB)
-25
-20
-24
-16
S22
(dB)
-13
-8
-14
-14
NF
(dB)
4.7
3.2
3.8
3.1
Absolute Maximum Ratings
Typical Performance - Engineering Application Circuits (See App Note AN-031)
Data above represents typical performance of the application circuits noted in Application Note AN-031.
Refer to the application note for additional RF data, PCB layouts, and BOMs for each application circuit. The
application note also includes biasing instructions and other key issues to be considered. For the latest
application notes please visit our site at www.sirenza.com or call your local sales representative.
* P
OUT
= +15dBm per tone, 1MHz tone spacing
Parameter
Symbol
Value
Unit
Drain Current
I
DS
200
mA
Forward Gate Current
I
GSF
1.2
mA
Reverse Gate Current
I
GSR
1.2
mA
Drain-to-Source Voltage
V
DS
+9.0
V
Gate-to-Source Voltage
V
GS
<-5 or >0
V
RF Input Power
P
IN
200
mW
Operating Lead Temperature
T
L
See Graph
°C
Storage Temperature Range
T
stor
-40 to +150
°C
Power Dissipation
P
DISS
See Graph
W
Channel Temperature
T
J
+165
°C
Operation of this device beyond any one of these limits may cause
permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values
MTTF is inversely proportional to the device junction
temperature. For junction temperature and MTTF
considerations the bias condition should also
satisfy the following expression:
P
DC
< (T
J
- T
L
) / R
TH
where:
P
DC
= I
* V
(W)
T
J
= Junction Temperature (°C)
T
L
= Lead Temperature (pin 4) (°C)
R
TH
= Thermal Resistance (°C/W)
T
Power Derating Curve
MTTF @ T
J
=150C exceeds 1E7 hours
12345678
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This area not recommended
for continuous reliable operation.
Operational (Tj<150C)
ABS MAX (Tj<165C)
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相關(guān)代理商/技術(shù)參數(shù) |
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| SHF-0198 | 制造商:STANFORD 制造商全稱:STANFORD 功能描述:DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET |
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