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參數(shù)資料
| 型號： | SGA-8343 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Low Noise, High Gain SiGe HBT |
| 中文描述： | 低噪聲，高增益SiGe HBT的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 181K |
| 代理商： | SGA-8343 |
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change
without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford
Microdevices product for use in life-support devices and/or systems.
Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
Phone: (800) SMI-MMIC
726 Palomar Ave., Sunnyvale, CA 94085
Preliminary
Product Description
http://www.stanfordmicro.com
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SGA-8343
Low Noise, High Gain SiGe HBT
Product Features
6 GHz Useful Bandwidth
Low F
MIN
:
0.9 dB @ 0.9 GHz
1.1 dB @ 1.9 GHz
24 dB @ 0.9 GHz
19 dB @ 1.9 GHz
High Gain (Gmax):
Easily Matched with
|Γ
| = 0.17 @ 1.9 GHz
OIP3 = +28.5 dBm, P1dB = +13 dBm
Low Cost High Performance SiGe HBT
Applications
LNA for Wireless Infrastructure
Fixed Wireless Infrastructure
Wireless Data
Driver Stage for Low Power Applications
Oscillators
Stanford Microdevices’ SGA-8343 is a high performance SiGe
HBT amplifier designed for operation from DC to 6 GHz. This RF
device uses the latest Silicon Germanium Heterostructure Bipolar
Transistor (SiGe HBT) process. The SGA-8343 is optimized
for 3V operation but can be biased at 2V for low-voltage battery
operated systems. The device is easily matched as
Γ
is
very close to 50 ohms. This device provides high gain, low NF,
and excellent linearity at a low cost.
Typical Gain Performance
Frequency (GHz)
G
Gmax
Gain
F
M
F
MIN
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