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參數(shù)資料
| 型號(hào)： | SFF75N08M |
| 廠商： | SOLID STATE DEVICES INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 55 AMP (note 1) /75 Volts 8.5 mO N-Channel Trench Gate MOSFET |
| 中文描述： | 55 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA |
| 封裝： | HERMETIC SEALED, TO-254, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | SFF75N08M |
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
4/
SFF75N08M
SFF75N08Z
Symbol
Min Typ Max Units
Drain to Source Breakdown Voltage
V
GS
= 0V, I
D
= 250μA
BV
DSS
75
––
––
V
Drain to Source On State Resistance
V
GS
= 10V, I
D
= 30A, Tj= 25
o
C
V
GS
= 10V, I
D
= 30A, Tj=125
o
C
V
GS
= 10V, I
D
= 30A, Tj= 175
o
C
R
DS(on)
––
––
––
7.5
10.0
12.5
8.5
––
––
mO
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250μA
V
GS(th)
2.0
––
4.0
V
Gate to Source Leakage
V
GS
= ±20V
I
GSS
––
––
±100
nA
Zero Gate Voltage Drain Current
V
DS
= 60V, V
GS
= 0V, T
j
= 25
o
C
V
DS
= 60V, V
GS
= 0V, T
j
= 125
o
C
V
DS
= 60V, V
GS
= 0V, T
j
= 200
o
C
I
DSS
––
––
––
––
1
50
10
μA
μA
mA
Forward Transconductance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Diode Forward Voltage
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
NOTES:
* Pulse Test: Pulse Width = 300μsec, Duty Cycle = 2%.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25
o
C.
V
DS
= 15V, I
D
= 30A, T
j
= 25
o
C
g
fs
25
––
––
Mho
V
GS
= 10V
V
DS
= 35V
I
D
= 110A
V
GS
= 10V
V
DS
= 35V
I
D
= 110A
R
G
= 2.5O
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
––
––
––
––
––
––
––
150
35
50
25
210
70
170
220
––
––
50
300
125
275
nC
nsec
I
F
= 110A, V
GS
= 0V
V
SD
––
1.1
1.5
V
I
F
= 100A, di/dt = 100A/usec
t
rr
I
RM(rec)
Q
rr
C
iss
C
oss
C
rss
––
85
4.5
0.16
8000
1000
600
135
7.5
0.35
––
––
––
nsec
A
μC
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
––
––
––
pF
Available Part Numbers:
Consult Factory
PIN ASSIGNMENT (Standard)
Package
Drain
TO-254 (M)
Pin 1
TO-254Z (Z)
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0021A DOC
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| SFF75N08Z | 制造商:SSDI 制造商全稱:Solid States Devices, Inc 功能描述:55 AMP (note 1) /75 Volts 8.5 mO N-Channel Trench Gate MOSFET |
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