參數(shù)資料
型號(hào)： SDM-09060-B1FY
英文描述： 925-960 MHz Class AB 65W Power Amplifier Module
中文描述： 925-960兆赫65瓦AB類功率放大器模塊
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 230K
代理商： SDM-09060-B1FY
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such
information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices
does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 S. Technology Court,
Phone: (800) SMI-MMIC
Broomfield, CO 80021
1
http://www.sirenza.com
EDS-104211Rev D
Sirenza Microdevices’
SDM-09060-B1F
65W power module is a robust
impedance matched, single-stage, push-pull Class AB amplifier mod-
ule suitable for use as a power amplifier driver or output stage. The
power transistors are fabricated using Sirenza's latest, high perfor-
mance LDMOS process. It is a drop-in, no-tune solution for high power
applications requiring high efficiency, excellent linearity, and unit-to-
unit repeatability. It is internally matched to 50 ohms.
Key Specifications
Symbol
Frequency
P
1dB
Gain
Gain Flatness
Efficiency
Efficiency
IRL
IMD
Delay
Phase Linearity
R
TH
Test Conditions Z
in
= Z
out
= 50
, V
DD
= 28.0V, I
DQ1
= I
DQ2
=300mA T
Flange
= 25oC
Parameter
Frequency of Operation
Output Power at 1dB Compression, 943 MHz
Gain at 60W PEP, 942MHz and 943MHz
Peak-to-Peak Gain Variation, 60W PEP, 925 - 960MHz
Drain Efficiency at 60W PEP, 942MHz and 943MHz
Drain Efficiency at 60W CW, 942MHz
Input Return Loss 60W PEP Output Power, 925 - 960MHz
3rd Order IMD Product, 60W PEP, 942MHz and 943MHz
Signal Delay from Pin 3 to Pin 8
Deviation from Linear Phase (Peak-to-Peak)
Thermal Resistance (Junction to Case)
Units
MHz
W
dB
dB
%
%
dB
dBc
nS
Deg
oC/W
Min.
925
60
16
-
32
Typ.
-
65
17
0.3
34
44
-15
-31
4.0
0.5
1.5
Max.
960
-
-
0.5
-
-
-12
-27
-
-
-
-
-
-
Functional Block Diagram
SDM-09060-B1F
SDM-09060-B1FY
925-960 MHz Class AB
65W Power Amplifier Module
Product Features
Available in RoHS compliant packaging
50
W
RF impedance
65W Output P
1dB
Single Supply Operation : Nominally 28V
High Gain: 17 dB at 942 MHz
High Efficiency : 44% at 942 MHz
ESD Protection: JEDEC Class 2 (2000V HBM)
Applications
Base Station PA driver
Repeater
CDMA
GSM / EDGE
Product Description
Quality Specifications
Parameter
ESD Rating
Description
Unit
Volts
Typical
Human Body Model
200
o
C Channel
2000
1.2 X 10
6
MTTF
Hours
+28V DC
+3V DC to +6 V DC
+28V DC
+3V DC to +6 V DC
2
Vds
Vds
1
out
RF
RF
in
Gnd
Gnd
Gnd
Gnd
Vgs
2
1
Vgs
o
o
o
o
0
180
0
180
Balun
Balun
Case Flange = Ground
Pb
RoHS Compliant
&
Green
Package
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