參數(shù)資料
型號(hào): SD702
廠商: Polyfet RF Devices
英文描述: SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
中文描述: 硅柵增強(qiáng)型射頻功率VDMOS晶體管
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 36K
代理商: SD702
S1A 2 DIE ID & GM Vs VG
0.10
1.00
10.00
100.00
0
2
4
6
Vgs in Volts
8
10
12
14
I
Id
gM
S1A 2 DICE CAPACITANCE
1
10
100
1000
0
5
10
15
20
25
30
VDS IN VOLT S
Coss
Ciss
Crss
S D702 F= 500MHZ, VDS = 28V, Idq= .8A
0
10
20
30
40
50
60
70
80
90
100
110
0
2
4
6
8
10
12
14
16
P I N I N W A T T S
8
9
10
11
12
13
Pout
Gain
Efficiency = 55%
POLYFET RF DEVICES
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
ID & GM VS VGS
IV CURVE
Zin Zout
PACKAGE DIMENSIONS IN INCHES
SD702
S1A 2 DIE IV
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
vg=8v
14
16
18
20
VVDS IN VOLTS
I
vg=2v
Vg=4v
0
vg=12v
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com
REVISION 03/28/2001
Tolerance .XX +/-0.01 .XXX +/-.005 inches
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