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參數(shù)資料
| 型號： | SD12CT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Transient Voltage Suppressor |
| 中文描述： | 350 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, CASE 477-02, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 48K |
| 代理商： | SD12CT1 |
BiDirectional TVS
I
PP
I
PP
V
I
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR
V
RWM
V
C
V
BR
SD12CT1
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 20 s @ T
L
≤
25
°
C
P
pk
350
W
IEC 6100042 (ESD)
Air
Contact
±
30
±
30
kV
IEC 6100044 (EFT)
40
A
Total Device Dissipation FR5 Board,
(Note 1) @ T
= 25
°
C
Derate above 25
°
C
P
D
200
1.5
mW
mW/
°
C
Thermal Resistance from JunctiontoAmbient
R
JA
635
°
C/W
Junction and Storage Temperature Range
T
J
, T
stg
65 to +150
°
C
Lead Solder Temperature Maximum (10 Second Duration)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Minimum Solder Footprint.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Variation of V
BR
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C, unless otherwise specified)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Reverse Working Voltage
(Note 2)
V
RWM
12
V
Breakdown Voltage
I
T
= 1 mA, (Note 3)
V
BR
13.3
V
Reverse Leakage Current
V
RWM
= 12 V
I
R
1.0
A
Clamping Voltage
Additional Clamping Voltage
I
PP
= 5 A, (8 x 20 sec Waveform)
I
PP
= 15 A, (8 x 20 sec Waveform)
V
C
19
24
V
Maximum Peak Pulse Current
8 x 20 sec Waveform
I
PP
15
A
Capacitance
V
R
= 0 V, f = 1 MHz
C
j
64
pF
V
R
= 12 V, f = 1 MHz
36
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SD12CT1_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Transient Voltage Suppressor |
| SD12CT1G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 12V Bidirectional ESD Protection Diode RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| SD12CT1G-CUT TAPE | 制造商:ON 功能描述:SD12CT1 Series 7.3 V 350 W Transient Voltage Suppressor Diode - SOD-323 |
| SD12CTC | 制造商:SEMTECH 制造商全稱:Semtech Corporation 功能描述:Single Line TVS Diode for ESD Protection in Portable Electronics |
| SD12CTG | 制造商:SEMTECH 制造商全稱:Semtech Corporation 功能描述:Single Line TVS Diode for ESD Protection in Portable Electronics |
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