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參數(shù)資料
| 型號(hào)： | SD103N25S20PSC |
| 廠商： | International Rectifier |
| 英文描述： | DISCRETE POWER DIODES and THYRISTORS |
| 中文描述： | 分立功率二極管和晶閘管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 416K |
| 代理商： | SD103N25S20PSC |
SD103N/R Series
2222222222222
12
S10
1.0
1.6
21
27
S15
S20
1.5
350
25
-30
2.3
61
37
2.0
3.2
75
39
Voltage
Code
V
RRM
max. repetitive
peak and off-state voltage
V
400
V
RSM
, maximum non-
repetitive peak voltage
V
500
I
RRM
max.
T
J
= 125°C
mA
Type number
04
SD103N/R..S10
08
800
900
10
1000
1100
12
1200
1300
SD103N/R..S15
14
1400
1500
16
1600
1700
20
2000
2100
25
2500
2600
ELECTRICAL SPECIFICATIONS
Voltage Ratings
SD103N/R..S20
35
I
F(AV)
Max. average forward current
110
A
180° conduction, half sine wave.
@ Case temperature
85
°C
I
F(RMS)
Max. RMS current
I
FSM
non-repetitive forward current
173
A
DC @ 75°C case temperature
Max. peak, one-cycle
3570
t = 10ms
No voltage
3730
t = 8.3ms
reapplied
3000
t = 10ms
100% V
RRM
reapplied
3140
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
64
t = 10ms
No voltage
Initial T
J
= T
J
max.
58
t = 8.3ms
reapplied
45
t = 10ms
100% V
RRM
41
t = 8.3ms
reapplied
I
2
√
t
Maximum I
2
√
t for fusing
636
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
F(TO)1
Low level of threshold voltage
V
F(TO)
2
High level of threshold voltage
r
f1
r
f2
V
FM
1.36
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
J
max.
(I
>
π
x I
F(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
F(AV)
< I <
π
x I
F(AV)
), T
J
= T
max.
(I
>
π
x I
F(AV)
), T
J
= T
J
max.
I
pk
= 345A, T
J
= 25°C, t
p
= 400 μs square pulse
1.94
Low level of forward slope resistance
2.55
High level of forward slope resistance
1.11
Max. forward voltage
2.23
V
Parameter
SD103N/R
Units
Conditions
Forward Conduction
KA
2
s
A
m
V
Code
(
μ
s)
(A)
(A/
μ
s)
(V)
(
μ
s)
(
μ
C)
(A)
Test conditions
Max. values @ T
J
= 125
°C
Recovery Characteristics
typical t
rr
@ 25% I
RRM
I
pk
di/dt
V
r
t
rr
Q
rr
I
rr
Square Pulse
@ 25% I
RRM
T
J
= 25
o
C
To Order
Next Data Sheet
Index
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