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參數(shù)資料
| 型號： | SC1302ESTRT |
| 廠商： | Semtech Corporation |
| 英文描述： | Dual High Speed Low-Side MOSFET Driver |
| 中文描述： | 雙高速低側MOSFET驅動器 |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 207K |
| 代理商： | SC1302ESTRT |
8
2005 Semtech Corp.
www.semtech.com
SC1302A/B/C/D/E/F
PRELIMINARY
POWER MANAGEMENT
Applications Information
The SC1302A/B/C/D/E/F is a high speed, high peak
current dual MOSFET driver. It is designed to drive power
MOSFETs with ultra-low rise/fall time and propagation
delays. As the switching frequency of PWM controllers is
increased to reduce power converters volume and cost,
fast rise and fall times are necessary to minimize switching
losses. While discrete solution can achieve reasonable
drive capability, implementing delay and other
housekeeping functions necessary for safe operation can
become cumbersome and costly. The SC1032A/B/C/
D/E/F presents a total solution for the high-speed, high
power density applications. Wide input supply range of
4.5V - 16.5V allows use in battery powered applications
as well as distributed power systems.
Supply Bypass and Layout
A 4.7μF to 10μF tantalum bypass capacitor with low ESR
(equivalent series resistance) and an additional 0.1μF
ceramic capacitor in parallel are recommended as supply
bypass to control switching and supply transients.
As with any high speed, high current circuit, proper layout
is critical in achieving optimum performance of the
SC1302A/B/C/D/E/F. Attention should be paid to the
proper placement of the driver, the switching MOSFET
and the bypass capacitors.
The driver should be placed as close as possible to the
external MOSFETs to eliminate the possibility of
oscillation caused by trace inductance and the MOSFET
gate capacitance. A resistor in the range of 10W could be
used in series with the gate drive to damp the ringing if
the drive output path is not short enough. The bypass
capacitors should also be placed closely between Vcc and
GND of the driver. A Schottky diode may be used to
connect the ground and the output pin to avoid latch-
ups in some applications.
Drive Capability and Power Dissipation
The SC1302A/B/C/D/E/F is able to deliver 1.6A peak
current for driving capacitive loads, such as MOSFETs.
Fast switching of the MOSFETs significantly reduces
switching losses for high frequency applications. Thermal
stress is reduced and system reliability is improved.
For simplicity, we assume that the gate capacitance of a
MOSFET is constant. The power delivered from the power
supply can be estimated based on this simplification. The
energy needed to charge the capacitor is given by:
1
E
=
2
ON
V
C
2
where C is the load capacitance and V is the output
voltage swing of the driver.
During turn off, the same amount of energy is dumped to
the ground. Therefore, the energy dissipated in one
switching cycle is:
2
TOTAL
V
C
E
=
The power dissipation due to the gate driving actions is
given by:
2
GATE
P
V
C
f
=
where, f is the switching frequency.
with V
= 12V, C = 1nF and f = 200kHz, the power
dissipation per output is:
(
) (
) ( )
12
nF
1
kHz
200
P
GATE
=
mW
29
2
=
The corresponding supply current is:
mW
29
V
CC
mA
4
V
12
P
I
GATE
=
=
=
Thermal Information
The driver’s junction temperature must be kept within the
rated limit at any time. The application system has to
effectively remove the heat generated in the driver in order
for proper functions and performance. If the junction
temperature reaches 150
o
C, the internal protection
circuit will be triggered to shut down the gate driver.
The power dissipation of the SC1302A/B/C/D/E/F should
be derated according to the following formula:
°
<
where T
A
= ambient temperature.
jA
T
C
125
n
Dissipatio
Power
A
θ
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SC1302F | 制造商:SEMTECH 制造商全稱:Semtech Corporation 功能描述:Dual High Speed Low-Side MOSFET Driver |
| SC1302FSTRT | 制造商:Semtech Corporation 功能描述: |
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