參數(shù)資料
型號(hào): SBT80-04GS
廠商: SANYO SEMICONDUCTOR CO LTD
元件分類: 整流器
英文描述: 4 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: SC-46, TO-220(LS), 3 PIN
文件頁(yè)數(shù): 2/3頁(yè)
文件大小: 231K
代理商: SBT80-04GS
SBT80-04GS
No. A0796-2/3
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Reverse Voltage
VR
IR=1mA, Tj=25°C *
40
V
Forward Voltage
VF
IF=3.0A, Tj=25°C *
0.55
V
Reverse Current
IR
VR=20V, Tj=25°C *
0.1
mA
Interterminal Capacitance
C
VR=10V, Tj=25°C *
160
pF
Thermal Resistance
Rth(j-c)
Junction-Case : Smoothed DC
4.6
°C / W
Note)
* : Value per element
0
1.0
10
0.4
1.6
1.2
0.8
5
7
2
3
5
7
2
3
5
7
2
3
2
0.01
0.1
Tj=150
25°
C
IT08506
0
10
1.0
5
7
5
7
3
2
5
7
3
2
100
10
20
30
40
50
(3)
(1)
0
4
5
7
6
3
1
2
110
9
58
7
6
34
2
IT08508
(4)
(3)
(1)
0
1.5
2.0
3.0
2.5
1.0
0.5
40
50
30
20
10
(2)
(4)
(2)
IT08507
IT08509
Tj=150
°C
max
150
°C typ
125
°C
typ
100
°C
typ
IF -- VF
IR -- VR
PF(AV) -- IO
PR(AV) -- VRM
PR max at Tj=150°C
Forward Voltage, VF -- V
Forward
Current,
I
F
--
A
Reverse Voltage, VR -- V
Reverse
Current,
I
R
--
mA
Peak Reverse Voltage, VRM -- V
A
verage
Reverse
Power
Dissipation,
P
R
(A
V)
-
W
Average Output Current, IO -- A
A
verage
Forward
Power
Dissipation,
P
F
(A
V)
-
W
180
°
360
°
θ
360
°
180
°
360
°
VR
(1)Rectangular wave
θ=60°
(2)Rectangular wave
θ=120°
(3)Rectangular wave
θ=180°
(4)Sine wave
θ=180°
(1)Rectangular wave
θ=300°
(2)Rectangular wave
θ=240°
(3)Rectangular wave
θ=180°
(4)Sine wave
θ=180°
Sine wave
Rectangular
wave
θ
360
°
VR
Rectangular
wave
Represented by max
C -- VR
Interterminal
Capacitance,
C
-
pF
Reverse Voltage, VR -- V
1.0
2
1000
100
2
3
5
7
5
7
35
7
10
23
5
7
f=100kHz
ID01008
Tc -- IO
Case
T
emperature,
T
c
-
°C
Average Output Current, IO -- A
(4)
(3)
0
123
110
120
130
170
160
150
140
100
90
45
7
9
810
6
(2)
(1)
IT12854
(1)Rectangular wave
θ=60°
(2)Rectangular wave
θ=120°
(3)Rectangular wave
θ=180°
(4)Sine wave
θ=180°
θ
360
°
Rectangular
wave
180
°
360
°
Sine
wave
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