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參數(shù)資料
| 型號(hào)： | SBT3904F |
| 廠商： | AUK Corp |
| 英文描述： | NPN Silicon Transistor |
| 中文描述： | NPN硅晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 50K |
| 代理商： | SBT3904F |
KST-2083-000
2
SBT3904F
Absolute maximum ratings
Ta=25
°°°°C
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
60
V
Collector-Emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
6V
Collector current
IC
200
mA
Collector dissipation
PC*
350
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
-55~150
°C
* : Package mounted on 99.5% alumina 10
×8×0.6mm
Electrical Characteristics
Ta=25
°°°°C
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C=10A, IE=0
60
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C=1mA, IB=0
40
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E=10A, IC=0
6
-
V
Collector cut-off current
I
CEX
V
CE=30V, VEB=3V
-
50
nA
DC current gain
h
FE
V
CE=1V, IC=10mA
100
-
300
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C=50mA, IB=5mA
-
0.3
V
Transition frequency
f
T
V
CE=20V, IC=10mA,
f=100MHz
300
-
MHz
Collector output capacitance
C
ob
V
CB=5V, IE=0, f=1MHz
-
4
pF
Delay time
t
d
--
35
ns
Rise time
t
r
V
CC=3Vdc, VBE(off)=0.5Vdc.
I
C=10mAdc, IB1=1mAdc
--
35
ns
Storage time
t
s
-
200
ns
Fall Time
t
f
V
CC=3Vdc,IC=10mAdc,
I
B1=IB2=1mAdc
--
50
ns
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| SBT3904F_1 | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN Silicon Transistor |
| SBT3904U | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN Silicon Transistor |
| SBT3904UF | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN Silicon Transistor |
| SBT3904UF_1 | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN Silicon Transistor |
| SBT3906 | 制造商:AUK 制造商全稱:AUK corp 功能描述:PNP Silicon Transistor |
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