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參數(shù)資料
| 型號： | SBFP420M |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | UHF to C Band Low-Noise Amplifier Low Phase Noise Osc.Applications |
| 中文描述： | 超高頻的C波段低噪聲放大器低相位噪聲Osc.Applications |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | SBFP420M |
SBFP420M
HD Seigi 010521 matumiya-1/2
UHF to C Band Low-Noise
Amplifier Low Phase Noise Osc.Applications
Features
Low noise : NF=1.1dB typ (f=1.8GHz).
High cut-off frequency : fT=18GHz typ (VCE=1V).
: fT=25GHz typ (VCE=3V).
Low operating voltage.
High gain :
S21e
2
=17dB typ (f=1.8GHz).
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
Unit
V
V
V
mA
mW
°
C
°
C
Collector-to- Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
15
4.5
1.5
35
160
150
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
fT(1)
fT(2)
Cre
VCB=5V, IE=0
VEB=1.5V, IC=0
VCE=4V, IC=20mA
VCE=1V, IC=10mA
VCE=3V, IC=30mA
VCB=2V, f=1MHz
VCE=2V, IC=5mA, f=1.8GHz
VCE=2V, IC=20mA, f=1.8GHz
VCE=2V, IC=5mA, f=1.8GHz
200
35
150
nA
μ
A
50
13
18
Gain-Bandwidth Product
18
25
GHz
GHz
pF
dB
dB
dB
Reverse Transfer Capacitance
0.15
15
17
1.1
0.3
Forward Transfer Gain
S21e
2
(1)
S21e
2
(2)
NF
12
14
Noise Figure
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : 0000000
SBFP420M
Package Dimensions
unit : mm
0000
[SBFP420M]
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
1:Collector
2:Emtter
3:Base
4:Emtter
SANYO:MCPH4
0
0
2
1
2.0
1.3
0.3
0
0
0.15
1
2
4
3
Marking:MB
Preliminary
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