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參數(shù)資料
| 型號(hào)： | sba-4089 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier |
| 中文描述： | 直流5千兆赫，級(jí)聯(lián)的InGaP / GaAs HBT的MMIC放大器 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 685K |
| 代理商： | SBA-4089 |
1
Product Description
Sirenza Microdevices’ SBA-4089 is a high performance
InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier.
A Darlington configuration designed with InGaP process
technology provides broadband performance up to 5 GHz with
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. Only a single
positive supply voltage, DC-blocking capacitors, a bias resistor,
and an optional RF choke are required for operation.
EDS-102822 Rev. C
303 South Technology Ct., Broomfield, CO 80021 Phone: (800) SMI-MMIC http://www.sirenza.com
Performance tests and ratings for Sirenza Microdevices’ products were performed internally by Sirenza and measured using specific computer systems and/or components and reflect the approximate performance of the products as measured by
those tests. Any difference in circuit implementation, test software, or test equipment may affect actual performance. The information provided herein is believed to be reliable at press time and Sirenza Microdevices assumes no responsibility for the use of
this information. All such use shall be entirely at the user’s own risk. Prices and specifications for Sirenza Microdevices’ products are subject to change without notice. Buyers should consult Sirenza Microdevices’ standard terms and conditions of sale
for Sirenza’s limited warranty with regard to its products. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any product for use in life-support
devices and/or systems.
SBA-4089
DC-5 GHz, Cascadable
InGaP/GaAs HBT MMIC Amplifier
Product Features
IP3 = 33.5dBm @ 1950MHz
Pout=13.3 dBm @-45dBc ACP IS-95 1950MHz
Robust 1000V ESD, Class 1C
Operates From Single Supply
Patented Thermal Design
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite Terminals
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Test Conditions:
V
S
= 8 V
R
BIAS
= 39 Ohms
I
D
= 80 mA Typ.
T
L
= 25oC
OIP
3
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z
L
= 50 Ohms
Gain and Return Loss vs Frequency
-50
-45
-40
-35
-30
-25
-20
-10
-5
0
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10
15
20
0
1
2
3
4
5
6
Frequency (GHz)
d
S11
S21
S22
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