參數(shù)資料
型號(hào)： SB15H45-E3/54
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 7 A, 45 V, SILICON, RECTIFIER DIODE
封裝： ROHS COMPLIANT, PLASTIC, P600, 2 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 74K
代理商： SB15H45-E3/54
New Product
SB15H45
Vishay General Semiconductor
Document Number: 89061
Revision: 13-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Photovoltaic Solarcell Protection Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
This datasheet reflects specifications of product in actual application.
FEATURES
Guardring for overvoltage protection
Low forward voltage drop, low power
losses
High efficiency operation
High forward surge capability
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse
bias.
MECHANICAL DATA
Case: P600, molded epoxy over passivated junction
Epoxy meets UL 94 V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
IF(AV)
15 A
VRRM
45 V
IFSM
300 A
VF at IF = 15 A
0.46 V
TOP max.
175 °C
Case Style P600
Notes:
(1) With heatsink, TL = 25 °C
(2) Without heatsink, free air
(3) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SB15H45
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
15 (1)
7 (2)
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
300
A
Operating junction and storage temperature range
TOP, TSTG
- 55 to + 175
°C
Junction temperature in DC forward current
without reverse bias, t
≤ 1 h (Fig. 1) (3)
TJ
≤ 200
°C
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