參數(shù)資料
型號: SB130
廠商: VISHAY SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 1 A, 30 V, SILICON, SIGNAL DIODE, DO-204AL
封裝: PLASTIC, DO-41, 2 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 327K
代理商: SB130
SB120 thru SB160
Document Number 88715
14-Jul-05
Vishay General Semiconductor
www.vishay.com
1
DO-204AL (DO-41)
Schottky Barrier Rectifier
Major Ratings and Characteristics
IF(AV)
1.0 A
VRRM
20 V to 60 V
IFSM
50 A
VF
0.48 V, 0.65 V
Tj max.
125 °C, 150 °C
Features
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High forward surge capability
High frequency operation
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in low voltage high frequency inverters, free
wheeling, dc-to-dc converters, and polarity protection
applications
Mechanical Data
Case: DO-204AL (DO-41)
Epoxy meets UL 94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity: Color band denotes the cathode end
Maximum Ratings
TA = 25 °C unless otherwise specified
Parameter
Symbol
SB120
SB130
SB140
SB150
SB160
Unit
Maximum repetitive peak reverse voltage
VRRM
20
30
40
50
60
V
Maximum RMS voltage
VRMS
14
21
28
35
42
V
Maximum DC blocking voltage
VDC
20
30
40
50
60
V
Maximum average forward rectified current at
0.375" (9.5 mm) lead length (See Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
50
A
Voltage rate of change (rated VR)
dv/dt
10000
V/s
Operating junction temperature range
TJ
- 65 to + 125
- 65 to + 150
°C
Storage temperature range
TSTG
- 65 to + 150
°C
相關(guān)PDF資料
PDF描述
SB120 1 A, 20 V, SILICON, SIGNAL DIODE, DO-204AL
SB220-BP 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-15
SB230-BP 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-15
SB260-TP 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-15
SB230-AP 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-15
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