參數(shù)資料
型號(hào): SAA4956TJ
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 存儲(chǔ)器
英文描述: 2.9-Mbit field memory with noise reduction
中文描述: SPECIALTY MEMORY CIRCUIT, PDSO40
封裝: PLASTIC, SOJ-40
文件頁(yè)數(shù): 16/36頁(yè)
文件大?。?/td> 243K
代理商: SAA4956TJ
1998 Dec 08
16
Philips Semiconductors
Preliminary specification
2.9-Mbit field memory with noise reduction
SAA4956TJ
8
In accordance with the Absolute Maximum Rating System (IEC 134).
LIMITING VALUES
Notes
1.
Machine model: equivalent to discharging a 200 pF capacitor through a 0
series resistor (‘0
’ is actually
0.75
μ
H + 10
).
Human body model: equivalent to discharging a 100 pF capacitor through a 1500
series resistor.
2.
9
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DD
V
DD(O)
V
DD(P)
V
I
supply voltage (pin 19)
supply voltage (pin 22)
supply voltage for protection circuits
input voltage
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
+5
+5
+5.5
+5.5
+3.8
+5
+3.8
200
+0.5
V
V
V
V
V
V
V
mA
V
V
DD(P)
= 5 V
V
DD
= V
DD(O)
= V
DD(P)
= 3.3 V
V
DD(P)
= 5 V
V
DD
= V
DD(O)
= V
DD(P)
= 3.3 V
V
O
output voltage
I
DD(tot)
V
GND-OGND
voltage difference between
GND and OGND
I
O(sc)
short-circuit output current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
T
amb
ambient temperature
V
es
electrostatic handling
total supply current
20
0
0
200
2000
50
750
+150
125
70
+200
+2000
mA
mW
°
C
°
C
°
C
V
V
note 1
note 2
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
60
K/W
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