參數(shù)資料
型號(hào): SA572F
廠商: NXP SEMICONDUCTORS
元件分類: 運(yùn)動(dòng)控制電子
英文描述: Programmable analog compandor
中文描述: COMPANDER, CDIP16
文件頁(yè)數(shù): 6/8頁(yè)
文件大小: 125K
代理商: SA572F
Philips Semiconductors RF Communications Products
Product specification
NE/SA572
Programmable analog compandor
October 7, 1987
7
V
OUT
V
IN
(I
1
=140
μ
A)
2
I
1
R
3
V
IN
(
AVG
)
R
2
R
1
(5)
Both the resistors R
1
and R
2
are tied to
internal summing nodes. R
1
is a 6.8k internal
resistor. The maximum input current into the
gain cell can be as large as 140
μ
A. This
corresponds to a voltage level of 140
μ
A
6.8k=952mV peak. The input peak current
into the rectifier is limited to 300
μ
A by the
internal bias system. Note that the value of
R
1
can be increased to accommodate higher
input level. R
2
and R
3
are external resistors.
It is easy to adjust the ratio of R
3
/R
2
for
desirable system voltage and current levels.
A small R
2
results in higher gain control
current and smaller static and dynamic
tracking error. However, an impedance buffer
A
1
may be necessary if the input is voltage
drive with large source impedance.
The gain cell output current feeds the
summing node of the external OPA A
2
. R
3
and A
2
convert the gain cell output current to
the output voltage. In high-performance
applications, A
2
has to be low-noise,
high-speed and wide band so that the
high-performance output of the gain cell will
not be degraded. The non-inverting input of
A
2
can be biased at the low noise internal
reference Pin 6 or 10. Resistor R
4
is used to
bias up the output DC level of A
2
for
maximum swing. The output DC level of A
2
is
given by
V
ODC
V
REF
1
R
3
R
4
V
B
R
3
R
4
(6)
V
B
can be tied to a regulated power supply
for a dual supply system and be grounded for
a single supply system. CA sets the attack
time constant and CR sets the recovery time
constant. *5COL
+
A1
(7,9)
R5
100k
R2
(3,13)
(8)
(16)
CA
1
μ
F
CR
10
μ
F
(4,12)
(2,14)
1k
(6,10) R6
17.3k
(5,11)
BUFFER
A2
R4
R3
V
OUT
V
IN
C
IN1
C
IN2
C
IN3
2.2
μ
F
V
REF
R1
6.8k
+VB
+V
CC
G
2.2
μ
F
C1
2.2
μ
F
Figure 4. Basic Expandor Schematic
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