參數(shù)資料
型號： SA5230NG
廠商： ON SEMICONDUCTOR
元件分類： 運(yùn)動控制電子
英文描述： Low Voltage Operational Amplifier
中文描述： OP-AMP, 4000 uV OFFSET-MAX, 0.6 MHz BAND WIDTH, PDIP8
封裝： LEAD FREE, PLASTIC, DIP-8
文件頁數(shù)： 5/18頁
文件大?。?/td> 253K
代理商： SA5230NG
NE5230, SA5230, SE5230
http://onsemi.com
5
DC AND AC ELECTRICAL CHARACTERISTIC
Unless otherwise specified,
±
0.9V
≤
Vs
≤
±
7.5 V or equivalent single supply,
R
L
= 10 k , full input common
mode range, over full operating temperature range.
Characteristic
Unit
Max
Typ
Min
Bias
Test Conditions
Symbol
NE5230, SA5230, SE5230
Large
Signal Open
Loop Gain
A
VOL
V
S
=
±
7.5 V
R
L
= 10 k ; T
A
= 25
°
C
High
120
2000
V/mV
Low
60
750
T
A
= T
low
to T
high
High
100
Low
50
Output Voltage Swing
V
OUT
V
S
=
±
0.9 V
T
A
= 25
°
C +SW
T
A
= 25
°
C
SW
T
A
= T
low
to T
high
; +SW
T
A
= T
low
to T
high
;
SW
T
A
= 25
°
C +SW
T
A
= 25
°
C
SW
T
A
= T
low
to T
high
; +SW
T
A
= T
low
to T
high
;
SW
Any
750
800
mV
Any
750
800
Any
700
Any
700
V
S
=
±
7.5 V
Any
7.30
7.35
V
Any
7.32
7.35
Any
7.25
7.30
Any
7.30
7.35
Slew Rate
SR
T
A
= 25
°
C
High
0.25
V/ s
Low
0.09
V/ s
Inverting Unity Gain Bandwidth
BW
C
L
= 100 pF; T
A
= 25
°
C
High
0.6
MHz
Low
0.25
MHz
Phase Margin
M
C
L
= 100 pF; T
A
= 25
°
C
Any
70
°
Settling Time
t
S
C
L
= 100 pF, 0.1%
High
2.0
s
Low
5.0
s
Input Noise
V
INN
R
S
= 0 ; f = 1.0 kHz
High
30
nV/
√
Hz
nV/
√
Hz
Low
60
Total Harmonic Distortion
THD
V
S =
±
7.5 V
A
V
= 1; V
IN
= 500 mV; f = 1.0 kHz
V
S
=
±
0.9 V
A
V
= 1, V
IN
= 500 mV; f = 1.0 kHz
High
0.003
%
High
0.002
%
For NE5230 devices, T
low
= 0
°
C and T
= +70
°
C. For SA5230 devices, T
low
=
40
°
C and T
high
= +85
°
C.
For SE5230 devices, T
low
=
40
°
C and T
high
= +125
°
C.
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