參數(shù)資料
型號: SA25F020LEMLFF
廠商: Electronic Theatre Controls, Inc.
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁數(shù): 33/37頁
文件大?。?/td> 560K
代理商: SA25F020LEMLFF
SA25F020 Advanced Information
SAIFUN
33
Powerup and Powerdown
The device must not be selected at
powerup or powerdown (that is, CSb must
follow the voltage applied on V
CC
) until V
CC
reaches the correct value, as follows:
=
V
CC
(min) at powerup, and then for a
further delay of t
PU
(as described in
Table 11)
=
V
SS
at powerdown
A simple pull-up resistor on CSb can
usually be used to insure safe and proper
powerup and powerdown. To avoid data
corruption and inadvertent write operations
during powerup, a Power On Reset (POR)
circuit is included. The logic inside the
device is held at reset while V
CC
is less
than the POR threshold value (V
POR
), all
operations are disabled and the device
does not respond to any instructions.
The device ignores all instructions until a
time delay of t
PU
has elapsed after the
moment that V
CC
rises above the VWI
threshold. However, correct operation of
the device is not guaranteed if by this time
V
CC
is still below V
CC
(min). No Write Status
Register, Program or Erase instructions
should be sent until t
PU
reaches the
minimum V
CC
threshold after V
CC
.
At powerup, the device is in Standby mode
(not SP mode) and the WEN bit is reset.
Normal precautions must be taken for
supply rail decoupling to stabilize the V
CC
feed. Each device in a system should have
the V
CC
rail decoupled by a suitable
capacitor close to the package pins (this
capacitor is generally of the order of
0.1 μF).
All operations are disabled and the device
does not respond to any instructions when
V
CC
drops at powerdown from the
operating voltage to below the V
POR
threshold. (The designer must be aware
that if a powerdown occurs while a Write,
Program or Erase cycle is in progress, data
corruption can result.)
Table 11. Powerup
Symbol
Parameter
Min.
Max
.
Unit
V
POR
POR Threshold
Value
2.2
2.4
V
t
PU
V
CC
(min) to CS
low
2
ms
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