參數(shù)資料
型號： S9S08LG32J0VLK
廠商： Freescale Semiconductor
文件頁數(shù)： 28/50頁
文件大?。?/td> 0K
描述： IC MCU 8BIT 32KB FLASH 80LQFP
標準包裝： 90
系列： S08
核心處理器： S08
芯體尺寸： 8-位
速度： 40MHz
連通性： I²C，LIN，SCI，SPI
外圍設備： LCD，LVD，POR，PWM，WDT
輸入/輸出數(shù)： 69
程序存儲器容量： 32KB（32K x 8）
程序存儲器類型： 閃存
RAM 容量： 1.9K x 8
電壓 - 電源 (Vcc/Vdd)： 2.7 V ~ 5.5 V
數(shù)據(jù)轉(zhuǎn)換器： A/D 16x12b
振蕩器型： 內(nèi)部
工作溫度： -40°C ~ 105°C
封裝/外殼： 80-LQFP
包裝： 托盤
MC9S08LG32 Series Data Sheet, Rev. 9
Electrical Characteristics
Freescale Semiconductor
34
2.12
LCD Specifications
2.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory section.
Table 17. LCD Electricals, 3 V Glass
C
Characteristic
Symbol
Min
Typ
Max
Units
D
VLL3 Supply Voltage
VLL3
2.7
—
5.5
V
D
LCD Frame Frequency
fFrame
28
30
64
Hz
D
LCD Charge Pump Capacitance
CLCD
—100
100
pF
D
LCD Bypass Capacitance
CBYLCD
—100
100
D
LCD Glass Capacitance
Cglass
—
2000
8000
Table 18. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
–40
C to 85 CV
prog/erase
2.7
5.5
V
D
Supply voltage for read operation
VRead
2.7
5.5
V
D
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
56.67
s
C
Byte program time (random location)2
tprog
9tFcyc
C
Byte program time (burst mode)2
tBurst
4tFcyc
C
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
C
Mass erase time2
tMass
20,000
tFcyc
D
Byte program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures
with VDD = 5.0 V, bus frequency = 4.0 MHz.
RIDDBP
—4
—
mA
D
Page erase current3
RIDDPE
—6
—
mA
C
Program/erase endurance4
TL to TH = –40 C to + 85 C
T = 25
C
4 Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
10,000
—
100,000
—
cycles
C
Data retention5
5 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25
C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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