參數(shù)資料
型號: S9037-1002
廠商: Hamamatsu Photonics
英文描述: Diode; High speed switching; VR (V): 30; IF (mA): -; Pd (mW): -; rf (ohm) max: -; Condition IF at rf (mA): -; Condition f at rf (MHz): -; VF (V) max: 0.6; Condition IF at VF (mA): 100; C (pF) max: 8; Condition VR at C (V): 0.5; Condition f at C (MHz): 1; Package: EFP
中文描述: CCD圖像傳感器高速運行,備份薄FFT的,防治荒漠化公約
文件頁數(shù): 3/9頁
文件大小: 184K
代理商: S9037-1002
CCD image sensor
S9037/S9038 series
-50
-40
-30
-20
0
-10
10
20
30
TEMPERATURE (C)
0.1
1
10
100
1000
10000
D
-
/
(Typ.)
0
100 200
10
WAVELENGTH (nm)
T
300 400 500 600 700 800 900
1000 1100 1200
20
30
40
50
60
70
80
90
100
(Typ. Ta=25
C)
QUARTZ WINDOW
AR COATED SAPPHIRE
I
Electrical and optical characteristics (Ta=25
°
C, unless otherwise noted)
Parameter
Saturation output voltage
Vertical
Full well capacity
Horizontal (summing)
CCD node sensitivity
25
°
C
Dark current *
5
(MPP mode)
0
°
C
Readout noise *
6
Dynamic range (line binning)
Photo response non-uniformity *
7
Spectral response range (without window)
*5: Dark current nearly doubles for every 5 to 7
°
C increase in temperature.
*6: -40
°
C, operating frequency is 80 kHz.
*7: Condition: half of saturation output voltage.
Symbol
Vsat
Min.
Typ.
Fw
×
Sv
300
600
1.2
4,000
200
100
6000
-
200 to 1100
Max.
Unit
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Fw
ke
-
Sv
μV/e
-
DS
e
-
/pixel/s
Nr
DR
PRNU
λ
e
-
rms
-
%
nm
±10
-
Q
WAVELENGTH (nm)
(Typ. Ta=25
C)
0
200
400
600
800
1000
1200
10
20
30
40
50
60
70
80
90
100
FRONT-ILLUMINATED
FRONT-ILLUMINATED
(UV COAT)
BACK-THINNED
I
Spectral response (without window) *
8
I
Spectral response of photosensitive surface
(without cap)
KMPDB0150EA
KMPDB0058EA
I
Dark current vs. temperature
KMPDB0037EB
3
WAVELENGTH (nm)
(Typ. Ta=25
C)
Q
120
100
0
20
40
120
100
80
60
140
160
180
200
I
Spectral transmittance characteristics
KMPDB0110EA
*8: Spectral response with quartz glass or AR-coated
sapphire are decreased by the transmittance.
相關PDF資料
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