參數(shù)資料
型號: S71GL064A40BFW0F0
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和RAM
文件頁數(shù): 78/102頁
文件大小: 1606K
代理商: S71GL064A40BFW0F0
78
S71GL032A Based MCPs
S71GL032A_00_A0 March 31, 2005
A d v a n c e I n f o r m a t i o n
Alternate CE# Controlled Erase and Program Operations-S29GL032A
Notes:
1.
Not 100% tested.
2.
See
“Erase And Programming Performance”
for more information
3.
For 1–16 words/1–32 bytes programmed.
4.
If a program suspend command is issued within t
POLL
, the device requires t
POLL
before reading status data, once
programming resumes (that is, the program resume command has been written). If the suspend command was issued after
t
POLL
, status data is available immediately after programming resumes. See
Figure 24
.
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
10
11
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
35
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
35
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
25
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
RH
RESET# High Time Before Write
Min
50
ns
t
POLL
Program Valid before Status Polling (Note 4)
Max
4
μs
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