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參數(shù)資料
| 型號(hào)： | S71GL064A40BFW0B2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和RAM |
| 文件頁數(shù)： | 80/102頁 |
| 文件大?。?/td> | 1606K |
| 代理商： | S71GL064A40BFW0B2 |
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80
S71GL032A Based MCPs
S71GL032A_00_A0 March 31, 2005
A d v a n c e I n f o r m a t i o n
Erase And Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, V
CC
= 3.0V, 10,000 cycles; checkerboard
data pattern.
2. Under worst case conditions of 90
°
C; Worst case V
CC
, 100,000 cycles.
3. Effective programming time (typ) is 15
μ
s (per word), 7.5
μ
s (per byte).
4. Effective accelerated programming time (typ) is 12.5
μ
s (per word), 6.3
μ
s (per byte).
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer
operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See
Table 22
for further information on command definitions.
Parameter
Typ ( Note 1)
Max
( Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h
programming
prior to erasure
(Note 6)
Chip Erase Time
S29GL032A
32
64
S29GL064A
64
128
Total Write Buffer Program Time (Notes 3, 5)
240
μs
Excludes system
level overhead
(Note 7)
Total Accelerated Effective Write Buffer Program Time
(Notes 4, 5)
200
μs
Chip Program Time
S29GL032A
31.5
sec
S29GL064A
63
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| S71GL064A40BFW0B3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
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| S71GL064A40BFW0F3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| S71GL064A80 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:STACKED MULTI CHIP PRODUCT FLASH MEMORY AND RAM |
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