參數(shù)資料
型號(hào)： S4349
廠商： Hamamatsu Photonics
英文描述： Si PIN photodiode
中文描述： 硅PIN光電二極管
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 128K
代理商： S4349
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho,
Higashi-ku,
Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesv
gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 200
7
Hamamatsu Photonics K.K.
Si PIN photodiode
S4349
Cat. No. KMPD1007E02
Mar
. 2007 DN
0.5
0.4
0.3
0.2
0
190
400
600
800
1000
WAVELENGTH
(nm)
P
0.6
0.7
0.8
(Typ. Ta=25 C)
0.1
I
Spectral response
KMPDB0126EA
0
190
400
600
800
1000
+1.0
+0.5
(Typ.)
+1.5
-0.5
WAVELENGTH
(nm)
T
C
KMPDB0127EA
I
Photo sensitivity temperature characteristic
I
Dimensional outline (unit: mm)
KMPDA0114EA
REVERSE VOLTAGE (V)
D
100 pA
1 nA
10 pA
1 pA
100 fA
10 fA
0.01
0.1
1
10
100
(Typ. Ta=25
C)
I
Dark current vs. reverse voltage
KMPDB0128EA
REVERSE VOLTAGE (V)
T
(Typ. Ta=25
C, f=1 MHz)
1 nF
10 pF
1 pF
100 fF
0.1
1
10
100
100 pF
KMPDB0129EA
I
Terminal capacitance vs. reverse voltage
1
ACTIVE AREA
DETAILS OF
PHOTODIODE
PHOTOSENSITIVE
SURFACE
WINDOW
5.9 ± 0.1
8.1 ± 0.2
9.2 ± 0.2
2
4
a
b
c
d
0
0.45
LEAD
0.1
ANODE
d
ANODE
a
CATHODE
(
CASE
)
ANODE
b
ANODE
c
CATHODE
(
CASE
)
NC
3
5.08 ± 0.2
2
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