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參數資料
| 型號： | S3096-02 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si PIN photodiode Dual-element, plastic package photodiode |
| 中文描述： | 硅PIN光電二極管雙元件，塑料封裝二極管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 116K |
| 代理商： | S3096-02 |
Features
l
High sensitivity
l
Uniform element sensitivity
l
Low cross-talk
l
Low noise
Applications
l
CD, DVD, MO (Magneto-Optical disc) signal pickups
l
Laser beam alignment
l
Various position detection applications
P H O T O D I O D E
Si PIN photodiode
S2721-02, S3096-02, S4204, S8703
Dual-element, plastic package photodiode
S2721-02, S3096-02, S4204 and S8703 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low
noise, these photodiodes have very low cross-talk between the elements.
Custom devices (with different element shapes, number of elements, characteristics and packages) are also available to meet you specific needs.
Please feel free to contact our sales office.
1
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Reverse
voltage
V
R
Max.
(V)
Active area
Element gap
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
Type No.
Dimensional
outline
(mm)
(
μ
m)
5
30
S2721-02
S3096-02
S4204
S8703
1 × 3 / 2 elements
1.2 × 3 / 2 elements
1 × 2 / 2 elements
20
20
-25 to +85
-40 to +100
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted, per 1 element)
Dark
current
I
D
V
R
=10 V
all elements
Spectral
response
range
λ
Peak
sensitivity
wavelength
λ
p
Photo
sensitivity
λ
=
λ
p
Temp.
coefficient
of
I
D
T
CID
Cut-off
frequency
fc
V
R
=10 V
R
L
=50
λ
=780 nm
-3 dB
Terminal
capacitance
Ct
V
R
=10 V
f=1 MHz
NEP
V
R
=10 V
Type No.
(nm)
(nm)
900
(A/W)
0.56
0.58
Typ.
(nA)
0.1
0.05
Max.
(nA)
2.0
0.5
(times/°C)
(MHz)
50
25
(pF)
(W/Hz
1/2
)
6.4 × 10
-15
7.2 × 10
-15
S2721-02
S3096-02
S4204
S8703
320 to 1060
5
320 to 1100
960
0.65
0.1
1.0
1.15
30
3
8.7 × 10
-15
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