參數(shù)資料
型號: S29PL256N70GAWW03
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 60K; RAM: 2048; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 320 (@12.5MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PRQP0080GB-A (80P6N-A)
中文描述: 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
封裝: 8 X 11.60 MM, LEAD FREE, FBGA-84
文件頁數(shù): 16/74頁
文件大?。?/td> 1968K
代理商: S29PL256N70GAWW03
16
S29PL-N MirrorBit
Flash Family
S29PL-N_00_A5 June 6, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
4.3.3
Physical Dimensions – VBH064, 8 x 11.6 mm – S29PL-N
Figure 4.5
Physical Dimensions – 64-Ball Fine-Pitch Ball Grid Array (S29PL-N)
Note
Recommended for wireless applications
3330 \ 16-038.25b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
PACKAGE
VBH 064
JEDEC
N/A
11.60 mm x 8.00 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.00
OVERALL THICKNESS
A1
0.18
---
---
BALL HEIGHT
A2
0.62
---
0.76
BODY THICKNESS
D
11.60 BSC.
BODY SIZE
E
8.00 BSC.
BODY SIZE
D1
8.80 BSC.
BALL FOOTPRINT
E1
7.20 BSC.
BALL FOOTPRINT
MD
12
ROW MATRIX SIZE D DIRECTION
ME
10
ROW MATRIX SIZE E DIRECTION
N
φ
b
e
64
TOTAL BALL COUNT
0.33
---
0.43
BALL DIAMETER
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
(A2-9,B1-4,B7-10,C1-K1,
M2-9,C10-K10,L1-4,L7-10,
G5-6,F5-6)
DEPOPULATED SOLDER BALLS
BOTTOM VIEW
TOP VIEW
SIDE VIEW
A1 CORNER
A2
A
10
9
10
M
L
J
K
e
C
0.05
(2X)
(2X)
C
0.05
A1
E
D
7
B
A
C
E
D
F
H
G
8
7
6
5
4
3
2
1
e
D1
E1
SE
7
B
C A
C
M
φ
0.15
φ
0.08 M
6
0.10 C
C
0.08
NX
φ
b
SD
A
B
C
SEATING PLANE
A1 CORNER
INDEX MARK
相關(guān)PDF資料
PDF描述
S29PL256N70GFW000 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 60K; RAM: 2048; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 320 (@12.5MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
S29PL256N70GFW002 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFW003 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFWW00 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL256N70GFI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFI002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFI003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFIW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFIW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory