參數(shù)資料
型號(hào): S29PL256N70GAWW02
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述: 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
封裝: 8 X 11.60 MM, LEAD FREE, FBGA-84
文件頁數(shù): 38/74頁
文件大小: 1968K
代理商: S29PL256N70GAWW02
38
S29PL-N MirrorBit
Flash Family
S29PL-N_00_A5 June 6, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 7.4
Write Operation Status Flowchart
Notes
1. DQ6 is toggling if Read2 DQ6 does not equal Read3 DQ6.
2. DQ2 is toggling if Read2 DQ2 does not equal Read3 DQ2.
3. May be due to an attempt to program a 0 to 1. Use the RESET command to exit operation.
4. Write buffer error if DQ1 of last read =1.
5. Invalid state, use RESET command to exit operation.
6. Valid data is the data that is intended to be programmed or all 1's for an erase operation.
7. Data polling algorithm valid for all operations except advanced sector protection.
START
Read 1
DQ7=valid
data
YES
NO
Read 1
DQ5=1
YES
NO
Write Buffer
Programming
YES
NO
Device BUSY,
Re-Poll
Read3
DQ1=1
YES
NO
Read 2
Read 3
Read 2
Read 3
Read 2
Read 3
Read3 DQ1=1
AND DQ7
Valid Data
YES
NO
(Note 4)
Write Buffer
Operation Failed
DQ6
toggling
YES
NO
TIMEOUT
(Note 1)
(Note 3)
Programming
Operation
DQ6
toggling
YES
NO
YES
NO
DQ2
toggling
YES
NO
Erase
Operation
Complete
Device in
Erase/Suspend
Mode
Program
Operation
Failed
DEVICE
ERROR
Erase
Operation
Complete
Read3= valid
data
YES
NO
Device BUSY,
Re-Poll
Device BUSY,
Re-Poll
Device BUSY,
Re-Poll
(Note 1)
(Note 2)
(Note 6)
(Note 5)
相關(guān)PDF資料
PDF描述
S29PL256N70GAWW03 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 60K; RAM: 2048; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 320 (@12.5MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PRQP0080GB-A (80P6N-A)
S29PL256N70GFW000 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 60K; RAM: 2048; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 320 (@12.5MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
S29PL256N70GFW002 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFW003 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFWW00 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL256N70GAWW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFI002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFI003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GFIW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory