參數(shù)資料
型號: S29PL256N70GAW000
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述: 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
封裝: 8 X 11.60 MM, LEAD FREE COMPLIANT, FBGA-84
文件頁數(shù): 54/74頁
文件大?。?/td> 1968K
代理商: S29PL256N70GAW000
54
S29PL-N MirrorBit
Flash Family
S29PL-N_00_A5 June 6, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
11. Electrical Specifications
11.1
Absolute Maximum Ratings
Notes
1. Minimum DC voltage on input or I/Os is –0.5 V. During voltage transitions, inputs or I/Os may undershoot V
to –2.0 V for periods of up
to 20 ns. See
Figure 11.1 on page 54
. Maximum DC voltage on input or I/Os is V
CC
+ 0.5 V. During voltage transitions outputs may
overshoot to V
CC
+ 2.0 V for periods up to 20 ns. See
Figure 11.2 on page 54
.
2. Minimum DC input voltage on pin WP#
ACC is –0.5 V. During voltage transitions, WP#
ACC may overshoot V
SS
to 2.0 V for periods of up
to 20 ns. See
Figure 11.1 on page 54
. Maximum DC voltage on pin WP#
ACC is +9.5 V, which may overshoot to 10.5 V for periods up to
20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.
4. Stresses above those listed under
Absolute Maximum Ratings on page 54
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data
sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.
Figure 11.1
Maximum Negative Overshoot Waveform
Figure 11.2
Maximum Positive Overshoot Waveform
Storage Temperature, Plastic Packages
–65°C to +150°C
Ambient Temperature with Power Applied
–65°C to +125°C
Voltage with Respect to Ground:
All Inputs and I/Os except as noted below
(Note 1)
–0.5 V to V
IO
+ 0.5 V
V
CC
(Note 1)
–0.5 V to +4.0 V
V
IO
(Note 1)
–0.5 V to +4.0V
ACC
(Note 2)
–0.5 V to +10.5 V
Output Short Circuit Current
(Note 3)
200 mA
20 ns
20 ns
+0.8 V
–0.5 V
20 ns
–2.0 V
20 ns
20 ns
V
CC
+2.0 V
V
CC
+0.5 V
20 ns
2.0 V
相關(guān)PDF資料
PDF描述
S29PL256N70GAW002 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 48K; RAM: 2048; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 320 (@12.5MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PRQP0080GB-A (80P6N-A)
S29PL256N70GAW003 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 48K; RAM: 2048; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 320 (@12.5MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
S29PL256N70GAWW00 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GAWW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GAWW03 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 60K; RAM: 2048; ROM Type: QzROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 320 (@12.5MHz); Operating Frequency / Supply Voltage: 1.8 to 5.5V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PRQP0080GB-A (80P6N-A)
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S29PL256N70GAW002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GAW003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GAWW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GAWW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL256N70GAWW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory