參數(shù)資料
型號(hào)： S29PL127N70GFWW02
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述： 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
封裝： 8 X 11.60 MM, LEAD FREE, FBGA-84
文件頁數(shù)： 26/74頁
文件大小： 1968K
代理商： S29PL127N70GFWW02
26
S29PL-N MirrorBit
Flash Family
S29PL-N_00_A5 June 6, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
Figure 7.1
Single Word Program Operation
Software Functions and Sample Code
Note
Base = Base Address.
The following is a C source code example of using the single word program function. See the
Spansion Low
Level Driver User’s Guide
(available on
www.spansion.com
) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program Command */
*((UINT16 *)base_addr + 0x555) = 0x00AA; /* write unlock cycle 1 */
*((UINT16 *)base_addr + 0x2AA) = 0x0055; /* write unlock cycle 2 */
*((UINT16 *)base_addr + 0x555) = 0x00A0; /* write program setup command */
*((UINT16 *)pa) = data; /* write data to be programmed */
/* Poll for program completion */
Table 7.7
Single Word Program
(LLD Function = lld_ProgramCmd)
Cycle
Operation
Word Address
Data
Unlock Cycle 1
Write
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 2AAh
0055h
Program Setup
Write
Base + 555h
00A0h
Program
Write
Word Address
Data Word
Write Unlock Cycle
s
:
Addre
ss
555h, D
a
t
a
AAh
Addre
ss
2AAh, D
a
t
a
55h
Write Progr
a
m Comm
a
nd:
Addre
ss
555h, D
a
t
a
A0h
Progr
a
m D
a
t
a
to Addre
ss
:
PA, PD
Unlock Cycle 1
Unlock Cycle 2
S
et
u
p Comm
a
nd
Progr
a
m Addre
ss
(PA),
Progr
a
m D
a
t
a
(PD)
FAIL. I
ssu
e re
s
et comm
a
nd
to ret
u
rn to re
a
d
a
rr
a
y mode.
Perform Polling Algorithm
(
s
ee Write Oper
a
tion
S
t
a
t
us
flowch
a
rt)
Ye
s
Ye
s
No
No
Polling
S
t
a
t
us
= B
us
y
Polling
S
t
a
t
us
= Done
Error condition
(Exceeded Timing Limit
s
)
PA
SS
. Device i
s
in
re
a
d mode.
相關(guān)PDF資料
PDF描述
S29PL127N70GFWW03 740; 38000/740 Series; Microcontroller; Bit Size: 8-bit; ROM: 32K; RAM: 2K; ROM Type: Mask ROM; CPU: 740 core; Minimum Instruction Execution Time (ns): 500 (@8MHz); Operating Frequency / Supply Voltage: 8MHz/3.0 to 3.6V; Operating Ambient Temperature (°C): -20 to 85; Package Code: PLQP0080KB-A (80P6Q-A)
S29PL129N 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65GAW000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65GAW002 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL129N65GAW003 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL127N70GFWW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N80FAI000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N80FAI002 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N80FAI003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N80FAIW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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