參數(shù)資料
型號(hào): S29JL032H90TAI223
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 2M X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: MO-142DD, TSOP-48
文件頁數(shù): 7/66頁
文件大小: 1691K
代理商: S29JL032H90TAI223
March 10, 2005 S29JL032H_00A11
S29JL032H
13
Ad vance
Info rmat i o n
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This
is one of two functions provided by the WP#/ACC pin. This function is primarily
intended to allow faster manufacturing throughput at the factory.
If the system asserts VHH on this pin, the device automatically enters the afore-
mentioned Unlock Bypass mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the time required for program
operations. The system would use a two-cycle program command sequence as
required by the Unlock Bypass mode. Removing VHH from the WP#/ACC pin re-
turns the device to normal operation. Note that VHH must not be asserted on
WP#/ACC for operations other than accelerated programming, or device damage
may result. In addition, the WP#/ACC pin must not be left floating or uncon-
nected; inconsistent behavior of the device may result. See “Write Protect
(WP#)” for related information.
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the au-
toselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ15–DQ0. Standard
read cycle timings apply in this mode. Refer to the Autoselect Mode and Autose-
lect Command Sequence sections for more information.
Simultaneous Read/Write Operations with Zero Latency
This device is capable of reading data from one bank of memory while program-
ming or erasing in the other bank of memory. An erase operation may also be
suspended to read from or program to another location within the same bank (ex-
cept the sector being erased). Figure 20 shows how read and write cycles may be
initiated for simultaneous operation with zero latency. ICC6 and ICC7 in the DC
Characteristics table represent the current specifications for read-while-program
and read-while-erase, respectively.
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