參數(shù)資料
型號: S29GL256M10FAIR10
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 16M X 16 FLASH 3V PROM, 100 ns, PBGA64
封裝: 18 X 12 MM, FORTIFIED, BGA-64
文件頁數(shù): 144/160頁
文件大?。?/td> 2142K
代理商: S29GL256M10FAIR10
144
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
TSOP Pin and BGA Package Capacitance
For package types TA, TF, BA, BF, FA, FF (refer to Ordering Information Pages):
For package types TB, TC, BB, BC, (refer to Ordering Information Pages):
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
8
10
pF
BGA
8
10
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
BGA
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
8
10
pF
BGA
8
10
pF
C
IN3
RESET# and WP#/ACC Pin
Capacitance
V
IN
= 0
TSOP
20
25
pF
BGA
15
20
pF
相關(guān)PDF資料
PDF描述
S29GL064M90BCIR03 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90BCIR13 MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
S29GL064M90BCIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL256M10TAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 100ns 56-Pin TSOP Tray
S29GL256M11FAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray
S29GL256M11FAIR12 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, FBGA64 IND - Trays
S29GL256M11FAIR2 制造商:Spansion 功能描述:NOR Flash, 16M x 16, 64 Pin, Plastic, BGA
S29GL256M11FAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 256M-Bit 32M x 8/16M x 16 110ns 64-Pin Fortified BGA Tray