參數(shù)資料
型號(hào): S29GL128P10TAIR10
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述: 128M X 1 FLASH 3V PROM, 100 ns, PDSO56
封裝: 20 X 14 MM, MO-142EC, TSOP-56
文件頁數(shù): 44/77頁
文件大小: 2121K
代理商: S29GL128P10TAIR10
44
S29GL-P MirrorBit
Flash Family
S29GL-P_00_A7 November 8, 2007
D a t a
S h e e t
( P r e l i m i n a r y )
8. There are no means for individually erasing a specific PPB and no specific sector address is
required for this operation.
9. Exit command must be issued after the execution which resets the device to read mode and re-
enables reads and writes for Sector 0.
10.The programming state of the PPB for a given sector can be verified by writing a PPB Status Read
Command to the device as described by the flow chart shown in
Figure 8.2
.
Figure 8.2
PPB Program Algorithm
Re
a
d Byte Twice
Addr =
S
A0
Enter PPB
Comm
a
nd
S
et.
Addr = BA
Progr
a
m PPB Bit.
Addr =
S
A
DQ5 = 1
Ye
s
Ye
s
Ye
s
No
No
No
Ye
s
DQ6 =
Toggle
DQ6 =
Toggle
Re
a
d Byte.
Addr =
S
A
PA
SS
FAIL
I
ssu
e Re
s
et
Comm
a
nd
Exit PPB
Comm
a
nd
S
et
DQ0 =
'0' (Pgm.)
Re
a
d Byte Twice
Addr =
S
A0
No
W
a
it 500
μs
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