參數(shù)資料
型號: S29GL128M90TFIR22
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝: LEAD FREE, MO-142-EC, TSOP-56
文件頁數(shù): 3/160頁
文件大?。?/td> 2142K
代理商: S29GL128M90TFIR22
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
3
P r e l i m i n a r y
enabling the host system to read boot-up firmware from the Flash memory
device.
The device reduces power consumption in the
standby mode
when it detects
specific voltage levels on CE# and RESET#, or when addresses have been stable
for a specified period of time.
The
Write Protect (WP#)
feature protects the first or last sector by asserting
a logic low on the WP#/ACC pin or WP# pin, depending on model number. The
protected sector will still be protected even during accelerated programming.
The
SecSi
(Secured Silicon) Sector
provides a 128-word/256-byte area for
code or data that can be permanently protected. Once this sector is protected,
no further changes within the sector can occur.
Spansion MirrorBit flash technology combines years of Flash memory manufac-
turing experience to produce the highest levels of quality, reliability and cost
effectiveness. The device electrically erases all bits within a sector simultaneously
via hot-hole assisted erase. The data is programmed using hot electron injection.
相關(guān)PDF資料
PDF描述
S29GL128M90TFIR23 MOSFET, Switching; VDSS (V): 100; ID (A): 4; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.12; RDS (ON) typ. (ohm) @4V[4.5V]: 0.15; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 420; toff (µs) typ: 0.11; Package: SOP-8
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